Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching

In this letter, the uniform 4H silicon carbide (SiC) mesopores was fabricated by pulsed electrochemical etching method. The length of the mesopores is about 19 μm with a diameter of about 19 nm. The introduction of pause time (T(off)) is crucial to form the uniform 4H-SiC mesopores. The pore diamete...

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Detalles Bibliográficos
Autores principales: Tan, Jia-Hui, Chen, Zhi-zhan, Lu, Wu-Yue, Cheng, Yue, He, Hong, Liu, Yi-Hong, Sun, Yu-Jun, Zhao, Gao-Jie
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4198072/
https://www.ncbi.nlm.nih.gov/pubmed/25324708
http://dx.doi.org/10.1186/1556-276X-9-570
Descripción
Sumario:In this letter, the uniform 4H silicon carbide (SiC) mesopores was fabricated by pulsed electrochemical etching method. The length of the mesopores is about 19 μm with a diameter of about 19 nm. The introduction of pause time (T(off)) is crucial to form the uniform 4H-SiC mesopores. The pore diameter will not change if etching goes with T(off). The hole concentration decreasing at the pore tips during the T(off) is the main reason for uniformity.

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