Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching

In this letter, the uniform 4H silicon carbide (SiC) mesopores was fabricated by pulsed electrochemical etching method. The length of the mesopores is about 19 μm with a diameter of about 19 nm. The introduction of pause time (T(off)) is crucial to form the uniform 4H-SiC mesopores. The pore diamete...

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Detalles Bibliográficos
Autores principales: Tan, Jia-Hui, Chen, Zhi-zhan, Lu, Wu-Yue, Cheng, Yue, He, Hong, Liu, Yi-Hong, Sun, Yu-Jun, Zhao, Gao-Jie
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4198072/
https://www.ncbi.nlm.nih.gov/pubmed/25324708
http://dx.doi.org/10.1186/1556-276X-9-570
_version_ 1782339684719919104
author Tan, Jia-Hui
Chen, Zhi-zhan
Lu, Wu-Yue
Cheng, Yue
He, Hong
Liu, Yi-Hong
Sun, Yu-Jun
Zhao, Gao-Jie
author_facet Tan, Jia-Hui
Chen, Zhi-zhan
Lu, Wu-Yue
Cheng, Yue
He, Hong
Liu, Yi-Hong
Sun, Yu-Jun
Zhao, Gao-Jie
author_sort Tan, Jia-Hui
collection PubMed
description In this letter, the uniform 4H silicon carbide (SiC) mesopores was fabricated by pulsed electrochemical etching method. The length of the mesopores is about 19 μm with a diameter of about 19 nm. The introduction of pause time (T(off)) is crucial to form the uniform 4H-SiC mesopores. The pore diameter will not change if etching goes with T(off). The hole concentration decreasing at the pore tips during the T(off) is the main reason for uniformity.
format Online
Article
Text
id pubmed-4198072
institution National Center for Biotechnology Information
language English
publishDate 2014
publisher Springer
record_format MEDLINE/PubMed
spelling pubmed-41980722014-10-16 Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching Tan, Jia-Hui Chen, Zhi-zhan Lu, Wu-Yue Cheng, Yue He, Hong Liu, Yi-Hong Sun, Yu-Jun Zhao, Gao-Jie Nanoscale Res Lett Nano Express In this letter, the uniform 4H silicon carbide (SiC) mesopores was fabricated by pulsed electrochemical etching method. The length of the mesopores is about 19 μm with a diameter of about 19 nm. The introduction of pause time (T(off)) is crucial to form the uniform 4H-SiC mesopores. The pore diameter will not change if etching goes with T(off). The hole concentration decreasing at the pore tips during the T(off) is the main reason for uniformity. Springer 2014-10-13 /pmc/articles/PMC4198072/ /pubmed/25324708 http://dx.doi.org/10.1186/1556-276X-9-570 Text en Copyright © 2014 Tan et al.; licensee Springer. http://creativecommons.org/licenses/by/4.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.
spellingShingle Nano Express
Tan, Jia-Hui
Chen, Zhi-zhan
Lu, Wu-Yue
Cheng, Yue
He, Hong
Liu, Yi-Hong
Sun, Yu-Jun
Zhao, Gao-Jie
Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching
title Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching
title_full Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching
title_fullStr Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching
title_full_unstemmed Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching
title_short Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching
title_sort fabrication of uniform 4h-sic mesopores by pulsed electrochemical etching
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4198072/
https://www.ncbi.nlm.nih.gov/pubmed/25324708
http://dx.doi.org/10.1186/1556-276X-9-570
work_keys_str_mv AT tanjiahui fabricationofuniform4hsicmesoporesbypulsedelectrochemicaletching
AT chenzhizhan fabricationofuniform4hsicmesoporesbypulsedelectrochemicaletching
AT luwuyue fabricationofuniform4hsicmesoporesbypulsedelectrochemicaletching
AT chengyue fabricationofuniform4hsicmesoporesbypulsedelectrochemicaletching
AT hehong fabricationofuniform4hsicmesoporesbypulsedelectrochemicaletching
AT liuyihong fabricationofuniform4hsicmesoporesbypulsedelectrochemicaletching
AT sunyujun fabricationofuniform4hsicmesoporesbypulsedelectrochemicaletching
AT zhaogaojie fabricationofuniform4hsicmesoporesbypulsedelectrochemicaletching

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