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Fabrication of uniform 4H-SiC mesopores by pulsed electrochemical etching
In this letter, the uniform 4H silicon carbide (SiC) mesopores was fabricated by pulsed electrochemical etching method. The length of the mesopores is about 19 μm with a diameter of about 19 nm. The introduction of pause time (T(off)) is crucial to form the uniform 4H-SiC mesopores. The pore diamete...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4198072/ https://www.ncbi.nlm.nih.gov/pubmed/25324708 http://dx.doi.org/10.1186/1556-276X-9-570 |