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A CMOS Smart Temperature and Humidity Sensor with Combined Readout
A fully-integrated complementary metal-oxide semiconductor (CMOS) sensor for combined temperature and humidity measurements is presented. The main purpose of the device is to monitor the hermeticity of micro-packages for implanted integrated circuits and to ensure their safe operation by monitoring...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2014
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4208220/ https://www.ncbi.nlm.nih.gov/pubmed/25230305 http://dx.doi.org/10.3390/s140917192 |
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author | Eder, Clemens Valente, Virgilio Donaldson, Nick Demosthenous, Andreas |
author_facet | Eder, Clemens Valente, Virgilio Donaldson, Nick Demosthenous, Andreas |
author_sort | Eder, Clemens |
collection | PubMed |
description | A fully-integrated complementary metal-oxide semiconductor (CMOS) sensor for combined temperature and humidity measurements is presented. The main purpose of the device is to monitor the hermeticity of micro-packages for implanted integrated circuits and to ensure their safe operation by monitoring the operating temperature and humidity on-chip. The smart sensor has two modes of operation, in which either the temperature or humidity is converted into a digital code representing a frequency ratio between two oscillators. This ratio is determined by the ratios of the timing capacitances and bias currents in both oscillators. The reference oscillator is biased by a current whose temperature dependency is complementary to the proportional to absolute temperature (PTAT) current. For the temperature measurement, this results in an exceptional normalized sensitivity of about 0.77%/°C at the accepted expense of reduced linearity. The humidity sensor is a capacitor, whose value varies linearly with relative humidity (RH) with a normalized sensitivity of 0.055%/% RH. For comparison, two versions of the humidity sensor with an area of either 0.2 mm(2) or 1.2 mm(2) were fabricated in a commercial 0.18 μm CMOS process. The on-chip readout electronics operate from a 5 V power supply and consume a current of approximately 85 μA. |
format | Online Article Text |
id | pubmed-4208220 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2014 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-42082202014-10-24 A CMOS Smart Temperature and Humidity Sensor with Combined Readout Eder, Clemens Valente, Virgilio Donaldson, Nick Demosthenous, Andreas Sensors (Basel) Article A fully-integrated complementary metal-oxide semiconductor (CMOS) sensor for combined temperature and humidity measurements is presented. The main purpose of the device is to monitor the hermeticity of micro-packages for implanted integrated circuits and to ensure their safe operation by monitoring the operating temperature and humidity on-chip. The smart sensor has two modes of operation, in which either the temperature or humidity is converted into a digital code representing a frequency ratio between two oscillators. This ratio is determined by the ratios of the timing capacitances and bias currents in both oscillators. The reference oscillator is biased by a current whose temperature dependency is complementary to the proportional to absolute temperature (PTAT) current. For the temperature measurement, this results in an exceptional normalized sensitivity of about 0.77%/°C at the accepted expense of reduced linearity. The humidity sensor is a capacitor, whose value varies linearly with relative humidity (RH) with a normalized sensitivity of 0.055%/% RH. For comparison, two versions of the humidity sensor with an area of either 0.2 mm(2) or 1.2 mm(2) were fabricated in a commercial 0.18 μm CMOS process. The on-chip readout electronics operate from a 5 V power supply and consume a current of approximately 85 μA. MDPI 2014-09-16 /pmc/articles/PMC4208220/ /pubmed/25230305 http://dx.doi.org/10.3390/s140917192 Text en © 2014 by the authors; licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/3.0/). |
spellingShingle | Article Eder, Clemens Valente, Virgilio Donaldson, Nick Demosthenous, Andreas A CMOS Smart Temperature and Humidity Sensor with Combined Readout |
title | A CMOS Smart Temperature and Humidity Sensor with Combined Readout |
title_full | A CMOS Smart Temperature and Humidity Sensor with Combined Readout |
title_fullStr | A CMOS Smart Temperature and Humidity Sensor with Combined Readout |
title_full_unstemmed | A CMOS Smart Temperature and Humidity Sensor with Combined Readout |
title_short | A CMOS Smart Temperature and Humidity Sensor with Combined Readout |
title_sort | cmos smart temperature and humidity sensor with combined readout |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4208220/ https://www.ncbi.nlm.nih.gov/pubmed/25230305 http://dx.doi.org/10.3390/s140917192 |
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