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Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors
In this study, titanium nitride (TiN) is synthesized using reactive sputtering for a self-aligned gate process. The Schottky barrier height of the TiN on n-GaN is around 0.5 to 0.6 eV and remains virtually constant with varying nitrogen ratios. As compared with the conventional Ni electrode, the TiN...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4214824/ https://www.ncbi.nlm.nih.gov/pubmed/25364317 http://dx.doi.org/10.1186/1556-276X-9-590 |