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Highly Compact (4F(2)) and Well Behaved Nano-Pillar Transistor Controlled Resistive Switching Cell for Neuromorphic System Application
To simplify the architecture of a neuromorphic system, it is extremely desirable to develop synaptic cells with the capacity of low operation power, high density integration, and well controlled synaptic behaviors. In this study, we develop a resistive switching device (ReRAM)-based synaptic cell, f...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2014
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4215303/ https://www.ncbi.nlm.nih.gov/pubmed/25359219 http://dx.doi.org/10.1038/srep06863 |
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author | Chen, Bing Wang, Xinpeng Gao, Bin Fang, Zheng Kang, Jinfeng Liu, Lifeng Liu, Xiaoyan Lo, Guo-Qiang Kwong, Dim-Lee |
author_facet | Chen, Bing Wang, Xinpeng Gao, Bin Fang, Zheng Kang, Jinfeng Liu, Lifeng Liu, Xiaoyan Lo, Guo-Qiang Kwong, Dim-Lee |
author_sort | Chen, Bing |
collection | PubMed |
description | To simplify the architecture of a neuromorphic system, it is extremely desirable to develop synaptic cells with the capacity of low operation power, high density integration, and well controlled synaptic behaviors. In this study, we develop a resistive switching device (ReRAM)-based synaptic cell, fabricated by the CMOS compatible nano-fabrication technology. The developed synaptic cell consists of one vertical gate-all-around Si nano-pillar transistor (1T) and one transition metal-oxide based resistive switching device (1R) stacked on top of the vertical transistor directly. Thanks to the vertical architecture and excellent controllability on the ON/OFF performance of the nano-pillar transistor, the 1T1R synaptic cell shows excellent characteristics such as extremely high-density integration ability with 4F(2) footprint, ultra-low operation current (<2 nA), fast switching speed (<10 ns), multilevel data storage and controllable synaptic switching, which are extremely desirable for simplifying the architecture of neuromorphic system. |
format | Online Article Text |
id | pubmed-4215303 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2014 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-42153032014-10-31 Highly Compact (4F(2)) and Well Behaved Nano-Pillar Transistor Controlled Resistive Switching Cell for Neuromorphic System Application Chen, Bing Wang, Xinpeng Gao, Bin Fang, Zheng Kang, Jinfeng Liu, Lifeng Liu, Xiaoyan Lo, Guo-Qiang Kwong, Dim-Lee Sci Rep Article To simplify the architecture of a neuromorphic system, it is extremely desirable to develop synaptic cells with the capacity of low operation power, high density integration, and well controlled synaptic behaviors. In this study, we develop a resistive switching device (ReRAM)-based synaptic cell, fabricated by the CMOS compatible nano-fabrication technology. The developed synaptic cell consists of one vertical gate-all-around Si nano-pillar transistor (1T) and one transition metal-oxide based resistive switching device (1R) stacked on top of the vertical transistor directly. Thanks to the vertical architecture and excellent controllability on the ON/OFF performance of the nano-pillar transistor, the 1T1R synaptic cell shows excellent characteristics such as extremely high-density integration ability with 4F(2) footprint, ultra-low operation current (<2 nA), fast switching speed (<10 ns), multilevel data storage and controllable synaptic switching, which are extremely desirable for simplifying the architecture of neuromorphic system. Nature Publishing Group 2014-10-31 /pmc/articles/PMC4215303/ /pubmed/25359219 http://dx.doi.org/10.1038/srep06863 Text en Copyright © 2014, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by-nc-sa/4.0/ This work is licensed under a Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-sa/4.0/ |
spellingShingle | Article Chen, Bing Wang, Xinpeng Gao, Bin Fang, Zheng Kang, Jinfeng Liu, Lifeng Liu, Xiaoyan Lo, Guo-Qiang Kwong, Dim-Lee Highly Compact (4F(2)) and Well Behaved Nano-Pillar Transistor Controlled Resistive Switching Cell for Neuromorphic System Application |
title | Highly Compact (4F(2)) and Well Behaved Nano-Pillar Transistor Controlled Resistive Switching Cell for Neuromorphic System Application |
title_full | Highly Compact (4F(2)) and Well Behaved Nano-Pillar Transistor Controlled Resistive Switching Cell for Neuromorphic System Application |
title_fullStr | Highly Compact (4F(2)) and Well Behaved Nano-Pillar Transistor Controlled Resistive Switching Cell for Neuromorphic System Application |
title_full_unstemmed | Highly Compact (4F(2)) and Well Behaved Nano-Pillar Transistor Controlled Resistive Switching Cell for Neuromorphic System Application |
title_short | Highly Compact (4F(2)) and Well Behaved Nano-Pillar Transistor Controlled Resistive Switching Cell for Neuromorphic System Application |
title_sort | highly compact (4f(2)) and well behaved nano-pillar transistor controlled resistive switching cell for neuromorphic system application |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4215303/ https://www.ncbi.nlm.nih.gov/pubmed/25359219 http://dx.doi.org/10.1038/srep06863 |
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