Fabrication of high performance thin-film transistors via pressure-induced nucleation

We report a method to improve the performance of polycrystalline Si (poly-Si) thin-film transistors (TFTs) via pressure-induced nucleation (PIN). During the PIN process, spatial variation in the local solidification temperature occurs because of a non-uniform pressure distribution during laser irrad...

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Detalles Bibliográficos
Autores principales: Kang, Myung-Koo, Kim, Si Joon, Kim, Hyun Jae
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4215323/
https://www.ncbi.nlm.nih.gov/pubmed/25358809
http://dx.doi.org/10.1038/srep06858

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4215323/
https://www.ncbi.nlm.nih.gov/pubmed/25358809
http://dx.doi.org/10.1038/srep06858

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