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CORRIGENDUM: Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application
| Autores principales: | , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4217112/ http://dx.doi.org/10.1038/srep06897 |
| _version_ | 1782342353917313024 |
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| author | Lee, Eunha Benayad, Anass Shin, Taeho Lee, HyungIk Ko, Dong-Su Kim, Tae Sang Son, Kyoung Seok Ryu, Myungkwan Jeon, Sanghun Park, Gyeong-Su |
| author_facet | Lee, Eunha Benayad, Anass Shin, Taeho Lee, HyungIk Ko, Dong-Su Kim, Tae Sang Son, Kyoung Seok Ryu, Myungkwan Jeon, Sanghun Park, Gyeong-Su |
| author_sort | Lee, Eunha |
| collection | PubMed |
| description | |
| format | Online Article Text |
| id | pubmed-4217112 |
| institution | National Center for Biotechnology Information |
| language | English |
| publishDate | 2014 |
| publisher | Nature Publishing Group |
| record_format | MEDLINE/PubMed |
| spelling | pubmed-42171122014-11-06 CORRIGENDUM: Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application Lee, Eunha Benayad, Anass Shin, Taeho Lee, HyungIk Ko, Dong-Su Kim, Tae Sang Son, Kyoung Seok Ryu, Myungkwan Jeon, Sanghun Park, Gyeong-Su Sci Rep Corrigenda Nature Publishing Group 2014-11-03 /pmc/articles/PMC4217112/ http://dx.doi.org/10.1038/srep06897 Text en Copyright © 2014, Macmillan Publishers Limited. All rights reserved |
| spellingShingle | Corrigenda Lee, Eunha Benayad, Anass Shin, Taeho Lee, HyungIk Ko, Dong-Su Kim, Tae Sang Son, Kyoung Seok Ryu, Myungkwan Jeon, Sanghun Park, Gyeong-Su CORRIGENDUM: Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application |
| title | CORRIGENDUM: Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application |
| title_full | CORRIGENDUM: Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application |
| title_fullStr | CORRIGENDUM: Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application |
| title_full_unstemmed | CORRIGENDUM: Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application |
| title_short | CORRIGENDUM: Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application |
| title_sort | corrigendum: nanocrystalline znon; high mobility and low band gap semiconductor material for high performance switch transistor and image sensor application |
| topic | Corrigenda |
| url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4217112/ http://dx.doi.org/10.1038/srep06897 |
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