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CORRIGENDUM: Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application

Detalles Bibliográficos
Autores principales:	Lee, Eunha, Benayad, Anass, Shin, Taeho, Lee, HyungIk, Ko, Dong-Su, Kim, Tae Sang, Son, Kyoung Seok, Ryu, Myungkwan, Jeon, Sanghun, Park, Gyeong-Su
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2014
Materias:	Corrigenda
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4217112/ http://dx.doi.org/10.1038/srep06897

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