Cargando…
Electric tuning of direct-indirect optical transitions in silicon
Electronic band structures in semiconductors are uniquely determined by the constituent elements of the lattice. For example, bulk silicon has an indirect bandgap and it prohibits efficient light emission. Here we report the electrical tuning of the direct/indirect band optical transition in an ultr...
Autores principales: | Noborisaka, J., Nishiguchi, K., Fujiwara, A. |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2014
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4223641/ https://www.ncbi.nlm.nih.gov/pubmed/25377598 http://dx.doi.org/10.1038/srep06950 |
Ejemplares similares
-
Tuning the Direct and Indirect Excitonic Transitions
of h-BN by Hydrostatic Pressure
por: Segura, Alfredo, et al.
Publicado: (2021) -
Inducing optical self-pulsation by electrically tuning graphene on a silicon microring
por: Tamura, Marcus, et al.
Publicado: (2022) -
Electric Field Controlled Indirect-Direct-Indirect Band Gap Transition in Monolayer InSe
por: Xiao, Xian-Bo, et al.
Publicado: (2019) -
Possible electric field induced indirect to direct band gap transition in MoSe(2)
por: Kim, B. S., et al.
Publicado: (2017) -
Gigahertz single-trap electron pumps in silicon
por: Yamahata, Gento, et al.
Publicado: (2014)