Heterogeneous Integration of Epitaxial Ge on Si using AlAs/GaAs Buffer Architecture: Suitability for Low-power Fin Field-Effect Transistors

Germanium-based materials and device architectures have recently appeared as exciting material systems for future low-power nanoscale transistors and photonic devices. Heterogeneous integration of germanium (Ge)-based materials on silicon (Si) using large bandgap buffer architectures could enable th...

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Detalles Bibliográficos
Autores principales: Hudait, Mantu K., Clavel, Michael, Goley, Patrick, Jain, Nikhil, Zhu, Yan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4223664/
https://www.ncbi.nlm.nih.gov/pubmed/25376723
http://dx.doi.org/10.1038/srep06964

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4223664/
https://www.ncbi.nlm.nih.gov/pubmed/25376723
http://dx.doi.org/10.1038/srep06964

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