Improved Exciton Dissociation at Semiconducting Polymer:ZnO Donor:Acceptor Interfaces via Nitrogen Doping of ZnO

Exciton dissociation at the zinc oxide/poly(3-hexylthiophene) (ZnO/P3HT) interface as a function of nitrogen doping of the zinc oxide, which decreases the electron concentration from approximately 10(19) cm(−3) to 10(17) cm(−3), is reported. Exciton dissociation and device photocurrent are strongly...

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Detalles Bibliográficos
Autores principales: Musselman, Kevin P, Albert-Seifried, Sebastian, Hoye, Robert L Z, Sadhanala, Aditya, Muñoz-Rojas, David, MacManus-Driscoll, Judith L, Friend, Richard H
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Blackwell Publishing Ltd 2014
Materias:
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Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4228972/
https://www.ncbi.nlm.nih.gov/pubmed/25520604
http://dx.doi.org/10.1002/adfm.201303994
Descripción
Sumario:Exciton dissociation at the zinc oxide/poly(3-hexylthiophene) (ZnO/P3HT) interface as a function of nitrogen doping of the zinc oxide, which decreases the electron concentration from approximately 10(19) cm(−3) to 10(17) cm(−3), is reported. Exciton dissociation and device photocurrent are strongly improved with nitrogen doping. This improved dissociation of excitons in the conjugated polymer is found to result from enhanced light-induced de-trapping of electrons from the surface of the nitrogen-doped ZnO. The ability to improve the surface properties of ZnO by introducing a simple nitrogen dopant has general applicability.

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