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Comparison of resistive switching characteristics using copper and aluminum electrodes on GeO(x)/W cross-point memories
Comparison of resistive switching memory characteristics using copper (Cu) and aluminum (Al) electrodes on GeO(x)/W cross-points has been reported under low current compliances (CCs) of 1 nA to 50 μA. The cross-point memory devices are observed by high-resolution transmission electron microscopy (HR...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Springer
2013
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4235176/ https://www.ncbi.nlm.nih.gov/pubmed/24305116 http://dx.doi.org/10.1186/1556-276X-8-509 |