The effect of doping Sb on the electronic structure and the device characteristics of Ovonic Threshold Switches based on Ge-Se

The Ovonic Threshold Switch (OTS) based on an amorphous chalcogenide material has attracted much interest as a promising candidate for a high-performance thin-film switching device enabling 3D-stacking of memory devices. In this work, we studied on the electronic structure of amorphous Sb-doped Ge(0...

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Detalles Bibliográficos
Autores principales: Shin, Sang-Yeol, Choi, J. M., Seo, Juhee, Ahn, Hyung-Woo, Choi, Yong Gyu, Cheong, Byung-ki, Lee, Suyoun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4235286/
https://www.ncbi.nlm.nih.gov/pubmed/25403772
http://dx.doi.org/10.1038/srep07099

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4235286/
https://www.ncbi.nlm.nih.gov/pubmed/25403772
http://dx.doi.org/10.1038/srep07099

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