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The effect of doping Sb on the electronic structure and the device characteristics of Ovonic Threshold Switches based on Ge-Se
The Ovonic Threshold Switch (OTS) based on an amorphous chalcogenide material has attracted much interest as a promising candidate for a high-performance thin-film switching device enabling 3D-stacking of memory devices. In this work, we studied on the electronic structure of amorphous Sb-doped Ge(0...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4235286/ https://www.ncbi.nlm.nih.gov/pubmed/25403772 http://dx.doi.org/10.1038/srep07099 |