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Hot Plate Annealing at a Low Temperature of a Thin Ferroelectric P(VDF-TrFE) Film with an Improved Crystalline Structure for Sensors and Actuators
Ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer 70/30 thin films are prepared by spin coating. The crystalline structure of these films is investigated by varying the annealing temperature from the ferroelectric phase to the paraelectric phase. A hot plate was used...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2014
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4239911/ https://www.ncbi.nlm.nih.gov/pubmed/25317763 http://dx.doi.org/10.3390/s141019115 |
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author | Mahdi, Rahman Ismael Gan, W.C. Abd. Majid, W. H. |
author_facet | Mahdi, Rahman Ismael Gan, W.C. Abd. Majid, W. H. |
author_sort | Mahdi, Rahman Ismael |
collection | PubMed |
description | Ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer 70/30 thin films are prepared by spin coating. The crystalline structure of these films is investigated by varying the annealing temperature from the ferroelectric phase to the paraelectric phase. A hot plate was used to produce a direct and an efficient annealing effect on the thin film. The dielectric, ferroelectric and pyroelectric properties of the P(VDF-TrFE) thin films are measured as a function of different annealing temperatures (80 to 140 °C). It was found that an annealing temperature of 100 °C (slightly above the Curie temperature, Tc) has induced a highly crystalline β phase with a rod-like crystal structure, as examined by X-ray. Such a crystal structure yields a high remanent polarization, P(r) = 94 mC/m(2), and pyroelectric constant, p = 24 μC/m(2)K. A higher annealing temperature exhibits an elongated needle-like crystal domain, resulting in a decrease in the crystalline structure and the functional electrical properties. This study revealed that highly crystalline P(VDF-TrFE) thin films could be induced at 100 °C by annealing the thin film with a simple and cheap method. |
format | Online Article Text |
id | pubmed-4239911 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2014 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-42399112014-11-21 Hot Plate Annealing at a Low Temperature of a Thin Ferroelectric P(VDF-TrFE) Film with an Improved Crystalline Structure for Sensors and Actuators Mahdi, Rahman Ismael Gan, W.C. Abd. Majid, W. H. Sensors (Basel) Article Ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer 70/30 thin films are prepared by spin coating. The crystalline structure of these films is investigated by varying the annealing temperature from the ferroelectric phase to the paraelectric phase. A hot plate was used to produce a direct and an efficient annealing effect on the thin film. The dielectric, ferroelectric and pyroelectric properties of the P(VDF-TrFE) thin films are measured as a function of different annealing temperatures (80 to 140 °C). It was found that an annealing temperature of 100 °C (slightly above the Curie temperature, Tc) has induced a highly crystalline β phase with a rod-like crystal structure, as examined by X-ray. Such a crystal structure yields a high remanent polarization, P(r) = 94 mC/m(2), and pyroelectric constant, p = 24 μC/m(2)K. A higher annealing temperature exhibits an elongated needle-like crystal domain, resulting in a decrease in the crystalline structure and the functional electrical properties. This study revealed that highly crystalline P(VDF-TrFE) thin films could be induced at 100 °C by annealing the thin film with a simple and cheap method. MDPI 2014-09-26 /pmc/articles/PMC4239911/ /pubmed/25317763 http://dx.doi.org/10.3390/s141019115 Text en © 2014 by the authors; licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Mahdi, Rahman Ismael Gan, W.C. Abd. Majid, W. H. Hot Plate Annealing at a Low Temperature of a Thin Ferroelectric P(VDF-TrFE) Film with an Improved Crystalline Structure for Sensors and Actuators |
title | Hot Plate Annealing at a Low Temperature of a Thin Ferroelectric P(VDF-TrFE) Film with an Improved Crystalline Structure for Sensors and Actuators |
title_full | Hot Plate Annealing at a Low Temperature of a Thin Ferroelectric P(VDF-TrFE) Film with an Improved Crystalline Structure for Sensors and Actuators |
title_fullStr | Hot Plate Annealing at a Low Temperature of a Thin Ferroelectric P(VDF-TrFE) Film with an Improved Crystalline Structure for Sensors and Actuators |
title_full_unstemmed | Hot Plate Annealing at a Low Temperature of a Thin Ferroelectric P(VDF-TrFE) Film with an Improved Crystalline Structure for Sensors and Actuators |
title_short | Hot Plate Annealing at a Low Temperature of a Thin Ferroelectric P(VDF-TrFE) Film with an Improved Crystalline Structure for Sensors and Actuators |
title_sort | hot plate annealing at a low temperature of a thin ferroelectric p(vdf-trfe) film with an improved crystalline structure for sensors and actuators |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4239911/ https://www.ncbi.nlm.nih.gov/pubmed/25317763 http://dx.doi.org/10.3390/s141019115 |
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