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Interfacial atomic structure analysis at sub-angstrom resolution using aberration-corrected STEM

The atomic structure of a SiGe/Si epitaxial interface grown via molecular beam epitaxy on a single crystal silicon substrate was investigated using an aberration-corrected scanning transmittance electron microscope equipped with a high-angle annular dark-field detector and an energy-dispersive spect...

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Detalles Bibliográficos
Autores principales:	Hsiao, Chien-Nan, Kuo, Shou-Yi, Lai, Fang-I, Chen, Wei-Chun
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer 2014
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4240948/ https://www.ncbi.nlm.nih.gov/pubmed/25426003 http://dx.doi.org/10.1186/1556-276X-9-578

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