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Glycine gated spiking inhibitory postsynaptic membrane at the synaptic cleft

BACKGROUND: Enzyme modified field effect transistor (ENFET) may be used to represent the variable conductance of transmitter-gated ion channels in the postsynaptic region of the neuron. PURPOSE: The objective of this work is to develop a simple analog circuit model that can simulate the function of...

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Detalles Bibliográficos
Autores principales: Deka, Krisha M, Roy, Soumik
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Indian Academy of Neurosciences 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4248464/
https://www.ncbi.nlm.nih.gov/pubmed/25452673
http://dx.doi.org/10.5214/ans.0972.7531.210404
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author Deka, Krisha M
Roy, Soumik
author_facet Deka, Krisha M
Roy, Soumik
author_sort Deka, Krisha M
collection PubMed
description BACKGROUND: Enzyme modified field effect transistor (ENFET) may be used to represent the variable conductance of transmitter-gated ion channels in the postsynaptic region of the neuron. PURPOSE: The objective of this work is to develop a simple analog circuit model that can simulate the function of neurotransmitter glycine gated ion channels of postsynaptic membrane at the synaptic cleft. METHODS: In this paper, Glycine sensitive ENFET is incorporated into the Hodgkin-Huxley (H-H) circuit model of the postsynaptic membrane at the synaptic cleft. RESULTS: Simulation of the circuit model yields an output representing the membrane potential of the synaptic region. Simulation is performed in MATLAB environment for inhibitory action of synapses. CONCLUSION: This model can be used in neuro-bioengineering fields for simulation of binding activity and electrical activity of the postsynaptic region.
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spelling pubmed-42484642014-12-01 Glycine gated spiking inhibitory postsynaptic membrane at the synaptic cleft Deka, Krisha M Roy, Soumik Ann Neurosci Research Article BACKGROUND: Enzyme modified field effect transistor (ENFET) may be used to represent the variable conductance of transmitter-gated ion channels in the postsynaptic region of the neuron. PURPOSE: The objective of this work is to develop a simple analog circuit model that can simulate the function of neurotransmitter glycine gated ion channels of postsynaptic membrane at the synaptic cleft. METHODS: In this paper, Glycine sensitive ENFET is incorporated into the Hodgkin-Huxley (H-H) circuit model of the postsynaptic membrane at the synaptic cleft. RESULTS: Simulation of the circuit model yields an output representing the membrane potential of the synaptic region. Simulation is performed in MATLAB environment for inhibitory action of synapses. CONCLUSION: This model can be used in neuro-bioengineering fields for simulation of binding activity and electrical activity of the postsynaptic region. Indian Academy of Neurosciences 2014-10 /pmc/articles/PMC4248464/ /pubmed/25452673 http://dx.doi.org/10.5214/ans.0972.7531.210404 Text en Copyright © 2014, The National Academy of Sciences http://creativecommons.org/licenses/by-nc-nd/4.0/ This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Research Article
Deka, Krisha M
Roy, Soumik
Glycine gated spiking inhibitory postsynaptic membrane at the synaptic cleft
title Glycine gated spiking inhibitory postsynaptic membrane at the synaptic cleft
title_full Glycine gated spiking inhibitory postsynaptic membrane at the synaptic cleft
title_fullStr Glycine gated spiking inhibitory postsynaptic membrane at the synaptic cleft
title_full_unstemmed Glycine gated spiking inhibitory postsynaptic membrane at the synaptic cleft
title_short Glycine gated spiking inhibitory postsynaptic membrane at the synaptic cleft
title_sort glycine gated spiking inhibitory postsynaptic membrane at the synaptic cleft
topic Research Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4248464/
https://www.ncbi.nlm.nih.gov/pubmed/25452673
http://dx.doi.org/10.5214/ans.0972.7531.210404
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