Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films

Widespread application of magnetic tunnel junctions (MTJs) for information storage has so far been limited by the complicated interplay between tunnel magnetoresistance (TMR) ratio and the product of resistance and junction area (RA). An intricate connection exists between TMR ratio, RA value and th...

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Detalles Bibliográficos
Autores principales: Li, D. L., Ma, Q. L., Wang, S. G., Ward, R. C. C., Hesjedal, T., Zhang, X.-G., Kohn, A., Amsellem, E., Yang, G., Liu, J. L., Jiang, J., Wei, H. X., Han, X. F.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4250913/
https://www.ncbi.nlm.nih.gov/pubmed/25451163
http://dx.doi.org/10.1038/srep07277

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