Strain-induced quantum spin Hall effect in methyl-substituted germanane GeCH(3)

Quantum spin Hall (QSH) insulators exhibit a bulk insulting gap and metallic edge states characterized by nontrivial topology. We investigated the electronic structure of an isolated layer of methyl substituted germanane GeCH(3) by density functional calculations (DFT), and its dynamic stability by...

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Detalles Bibliográficos
Autores principales: Ma, Yandong, Dai, Ying, Wei, Wei, Huang, Baibiao, Whangbo, Myung-Hwan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4252893/
https://www.ncbi.nlm.nih.gov/pubmed/25465887
http://dx.doi.org/10.1038/srep07297
Descripción
Sumario:Quantum spin Hall (QSH) insulators exhibit a bulk insulting gap and metallic edge states characterized by nontrivial topology. We investigated the electronic structure of an isolated layer of methyl substituted germanane GeCH(3) by density functional calculations (DFT), and its dynamic stability by phonon dispersion calculations. Our results show that an isolated GeCH(3) layer has no dynamic instability, and is a QSH insulator under reasonable strain. This QSH insulator has a large enough band gap (up to 108 meV) at 12% strain. The advantageous features of this QSH insulator for practical room-temperature applications are discussed.

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