Strain-induced quantum spin Hall effect in methyl-substituted germanane GeCH(3)

Quantum spin Hall (QSH) insulators exhibit a bulk insulting gap and metallic edge states characterized by nontrivial topology. We investigated the electronic structure of an isolated layer of methyl substituted germanane GeCH(3) by density functional calculations (DFT), and its dynamic stability by...

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Autores principales: Ma, Yandong, Dai, Ying, Wei, Wei, Huang, Baibiao, Whangbo, Myung-Hwan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4252893/
https://www.ncbi.nlm.nih.gov/pubmed/25465887
http://dx.doi.org/10.1038/srep07297
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author Ma, Yandong
Dai, Ying
Wei, Wei
Huang, Baibiao
Whangbo, Myung-Hwan
author_facet Ma, Yandong
Dai, Ying
Wei, Wei
Huang, Baibiao
Whangbo, Myung-Hwan
author_sort Ma, Yandong
collection PubMed
description Quantum spin Hall (QSH) insulators exhibit a bulk insulting gap and metallic edge states characterized by nontrivial topology. We investigated the electronic structure of an isolated layer of methyl substituted germanane GeCH(3) by density functional calculations (DFT), and its dynamic stability by phonon dispersion calculations. Our results show that an isolated GeCH(3) layer has no dynamic instability, and is a QSH insulator under reasonable strain. This QSH insulator has a large enough band gap (up to 108 meV) at 12% strain. The advantageous features of this QSH insulator for practical room-temperature applications are discussed.
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spelling pubmed-42528932014-12-08 Strain-induced quantum spin Hall effect in methyl-substituted germanane GeCH(3) Ma, Yandong Dai, Ying Wei, Wei Huang, Baibiao Whangbo, Myung-Hwan Sci Rep Article Quantum spin Hall (QSH) insulators exhibit a bulk insulting gap and metallic edge states characterized by nontrivial topology. We investigated the electronic structure of an isolated layer of methyl substituted germanane GeCH(3) by density functional calculations (DFT), and its dynamic stability by phonon dispersion calculations. Our results show that an isolated GeCH(3) layer has no dynamic instability, and is a QSH insulator under reasonable strain. This QSH insulator has a large enough band gap (up to 108 meV) at 12% strain. The advantageous features of this QSH insulator for practical room-temperature applications are discussed. Nature Publishing Group 2014-12-03 /pmc/articles/PMC4252893/ /pubmed/25465887 http://dx.doi.org/10.1038/srep07297 Text en Copyright © 2014, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by-nc-nd/4.0/ This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/4.0/
spellingShingle Article
Ma, Yandong
Dai, Ying
Wei, Wei
Huang, Baibiao
Whangbo, Myung-Hwan
Strain-induced quantum spin Hall effect in methyl-substituted germanane GeCH(3)
title Strain-induced quantum spin Hall effect in methyl-substituted germanane GeCH(3)
title_full Strain-induced quantum spin Hall effect in methyl-substituted germanane GeCH(3)
title_fullStr Strain-induced quantum spin Hall effect in methyl-substituted germanane GeCH(3)
title_full_unstemmed Strain-induced quantum spin Hall effect in methyl-substituted germanane GeCH(3)
title_short Strain-induced quantum spin Hall effect in methyl-substituted germanane GeCH(3)
title_sort strain-induced quantum spin hall effect in methyl-substituted germanane gech(3)
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4252893/
https://www.ncbi.nlm.nih.gov/pubmed/25465887
http://dx.doi.org/10.1038/srep07297
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