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One-dimensional CuO nanowire: synthesis, electrical, and optoelectronic devices application
In this work, we presented a surface mechanical attrition treatment (SMAT)-assisted approach to the synthesis of one-dimensional copper oxide nanowires (CuO NWs) for nanodevices applications. The as-prepared CuO NWs have diameter and the length of 50 ~ 200 nm and 5 ~ 20 μm, respectively, with a pref...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2014
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4256975/ https://www.ncbi.nlm.nih.gov/pubmed/25489288 http://dx.doi.org/10.1186/1556-276X-9-637 |
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author | Luo, Lin-Bao Wang, Xian-He Xie, Chao Li, Zhong-Jun Lu, Rui Yang, Xiao-Bao Lu, Jian |
author_facet | Luo, Lin-Bao Wang, Xian-He Xie, Chao Li, Zhong-Jun Lu, Rui Yang, Xiao-Bao Lu, Jian |
author_sort | Luo, Lin-Bao |
collection | PubMed |
description | In this work, we presented a surface mechanical attrition treatment (SMAT)-assisted approach to the synthesis of one-dimensional copper oxide nanowires (CuO NWs) for nanodevices applications. The as-prepared CuO NWs have diameter and the length of 50 ~ 200 nm and 5 ~ 20 μm, respectively, with a preferential growth orientation along [1 [Formula: see text] 0] direction. Interestingly, nanofield-effect transistor (nanoFET) based on individual CuO NW exhibited typical p-type electrical conduction, with a hole mobility of 0.129 cm(2)V(-1) s(-1) and hole concentration of 1.34 × 10(18) cm(-3), respectively. According to first-principle calculations, such a p-type electrical conduction behavior was related to the oxygen vacancies in CuO NWs. What is more, the CuO NW device was sensitive to visible light illumination with peak sensitivity at 600 nm. The responsitivity, conductive gain, and detectivity are estimated to be 2.0 × 10(2) A W(-1), 3.95 × 10(2) and 6.38 × 10(11) cm Hz(1/2) W(-1), respectively, which are better than the devices composed of other materials. Further study showed that nanophotodetectors assembled on flexible polyethylene terephthalate (PET) substrate can work under different bending conditions with good reproducibility. The totality of the above results suggests that the present CuO NWs are potential building blocks for assembling high-performance optoelectronic devices. |
format | Online Article Text |
id | pubmed-4256975 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2014 |
publisher | Springer |
record_format | MEDLINE/PubMed |
spelling | pubmed-42569752014-12-08 One-dimensional CuO nanowire: synthesis, electrical, and optoelectronic devices application Luo, Lin-Bao Wang, Xian-He Xie, Chao Li, Zhong-Jun Lu, Rui Yang, Xiao-Bao Lu, Jian Nanoscale Res Lett Nano Express In this work, we presented a surface mechanical attrition treatment (SMAT)-assisted approach to the synthesis of one-dimensional copper oxide nanowires (CuO NWs) for nanodevices applications. The as-prepared CuO NWs have diameter and the length of 50 ~ 200 nm and 5 ~ 20 μm, respectively, with a preferential growth orientation along [1 [Formula: see text] 0] direction. Interestingly, nanofield-effect transistor (nanoFET) based on individual CuO NW exhibited typical p-type electrical conduction, with a hole mobility of 0.129 cm(2)V(-1) s(-1) and hole concentration of 1.34 × 10(18) cm(-3), respectively. According to first-principle calculations, such a p-type electrical conduction behavior was related to the oxygen vacancies in CuO NWs. What is more, the CuO NW device was sensitive to visible light illumination with peak sensitivity at 600 nm. The responsitivity, conductive gain, and detectivity are estimated to be 2.0 × 10(2) A W(-1), 3.95 × 10(2) and 6.38 × 10(11) cm Hz(1/2) W(-1), respectively, which are better than the devices composed of other materials. Further study showed that nanophotodetectors assembled on flexible polyethylene terephthalate (PET) substrate can work under different bending conditions with good reproducibility. The totality of the above results suggests that the present CuO NWs are potential building blocks for assembling high-performance optoelectronic devices. Springer 2014-11-26 /pmc/articles/PMC4256975/ /pubmed/25489288 http://dx.doi.org/10.1186/1556-276X-9-637 Text en Copyright © 2014 Luo et al.; licensee Springer. http://creativecommons.org/licenses/by/4.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited. |
spellingShingle | Nano Express Luo, Lin-Bao Wang, Xian-He Xie, Chao Li, Zhong-Jun Lu, Rui Yang, Xiao-Bao Lu, Jian One-dimensional CuO nanowire: synthesis, electrical, and optoelectronic devices application |
title | One-dimensional CuO nanowire: synthesis, electrical, and optoelectronic devices application |
title_full | One-dimensional CuO nanowire: synthesis, electrical, and optoelectronic devices application |
title_fullStr | One-dimensional CuO nanowire: synthesis, electrical, and optoelectronic devices application |
title_full_unstemmed | One-dimensional CuO nanowire: synthesis, electrical, and optoelectronic devices application |
title_short | One-dimensional CuO nanowire: synthesis, electrical, and optoelectronic devices application |
title_sort | one-dimensional cuo nanowire: synthesis, electrical, and optoelectronic devices application |
topic | Nano Express |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4256975/ https://www.ncbi.nlm.nih.gov/pubmed/25489288 http://dx.doi.org/10.1186/1556-276X-9-637 |
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