Electroluminescence of ordered ZnO nanorod array/p-GaN light-emitting diodes with graphene current spreading layer

Ordered ZnO nanorod array/p-GaN heterojunction light-emitting diodes (LEDs) have been fabricated by introducing graphene as the current spreading layer, which exhibit improved electroluminescence performance by comparison to the LED using a conventional structure (indium-tin-oxide as the current spr...

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Detalles Bibliográficos
Autores principales: Dong, Jing-Jing, Hao, Hui-Ying, Xing, Jie, Fan, Zhen-Jun, Zhang, Zi-Li
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4257526/
https://www.ncbi.nlm.nih.gov/pubmed/25489284
http://dx.doi.org/10.1186/1556-276X-9-630
Descripción
Sumario:Ordered ZnO nanorod array/p-GaN heterojunction light-emitting diodes (LEDs) have been fabricated by introducing graphene as the current spreading layer, which exhibit improved electroluminescence performance by comparison to the LED using a conventional structure (indium-tin-oxide as the current spreading layer). In addition, by adjusting the diameter of ZnO nanorod array in use, the light emission of the ZnO nanorod array/p-GaN heterojunction LEDs was enhanced further. This work has great potential applications in solid-state lighting, high performance optoelectronic devices, and so on. PACS: 78.60.Fi; 85.60.Jb; 78.67.Lt; 81.10.Dn

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