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The Interface between Gd and Monolayer MoS(2): A First-Principles Study

We analyze the electronic structure of interfaces between two-, four- and six-layer Gd(0001) and monolayer MoS(2) by first-principles calculations. Strong chemical bonds shift the Fermi energy of MoS(2) upwards into the conduction band. At the surface and interface the Gd f states shift to lower ene...

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Detalles Bibliográficos
Autores principales: Zhang, Xuejing, Mi, Wenbo, Wang, Xiaocha, Cheng, Yingchun, Schwingenschlögl, Udo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4258683/
https://www.ncbi.nlm.nih.gov/pubmed/25482498
http://dx.doi.org/10.1038/srep07368
Descripción
Sumario:We analyze the electronic structure of interfaces between two-, four- and six-layer Gd(0001) and monolayer MoS(2) by first-principles calculations. Strong chemical bonds shift the Fermi energy of MoS(2) upwards into the conduction band. At the surface and interface the Gd f states shift to lower energy and new surface/interface Gd d states appear at the Fermi energy, which are strongly hybridized with the Mo 4d states and thus lead to a high spin-polarization (ferromagnetically ordered Mo magnetic moments of 0.15 μ(B)). Gd therefore is an interesting candidate for spin injection into monolayer MoS(2).