Cargando…
Transition Metal Dichalcogenide Growth via Close Proximity Precursor Supply
Reliable chemical vapour deposition (CVD) of transition metal dichalcogenides (TMDs) is currently a highly pressing research field, as numerous potential applications rely on the production of high quality films on a macroscopic scale. Here, we show the use of liquid phase exfoliated nanosheets and...
Autores principales: | , , , , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2014
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4260218/ https://www.ncbi.nlm.nih.gov/pubmed/25487822 http://dx.doi.org/10.1038/srep07374 |
_version_ | 1782348145295884288 |
---|---|
author | O'Brien, Maria McEvoy, Niall Hallam, Toby Kim, Hye-Young Berner, Nina C. Hanlon, Damien Lee, Kangho Coleman, Jonathan N. Duesberg, Georg S. |
author_facet | O'Brien, Maria McEvoy, Niall Hallam, Toby Kim, Hye-Young Berner, Nina C. Hanlon, Damien Lee, Kangho Coleman, Jonathan N. Duesberg, Georg S. |
author_sort | O'Brien, Maria |
collection | PubMed |
description | Reliable chemical vapour deposition (CVD) of transition metal dichalcogenides (TMDs) is currently a highly pressing research field, as numerous potential applications rely on the production of high quality films on a macroscopic scale. Here, we show the use of liquid phase exfoliated nanosheets and patterned sputter deposited layers as solid precursors for chemical vapour deposition. TMD monolayers were realized using a close proximity precursor supply in a CVD microreactor setup. A model describing the growth mechanism, which is capable of producing TMD monolayers on arbitrary substrates, is presented. Raman spectroscopy, photoluminescence, X-ray photoelectron spectroscopy, atomic force microscopy, transmission electron microscopy, scanning electron microscopy and electrical transport measurements reveal the high quality of the TMD samples produced. Furthermore, through patterning of the precursor supply, we achieve patterned growth of monolayer TMDs in defined locations, which could be adapted for the facile production of electronic device components. |
format | Online Article Text |
id | pubmed-4260218 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2014 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-42602182014-12-15 Transition Metal Dichalcogenide Growth via Close Proximity Precursor Supply O'Brien, Maria McEvoy, Niall Hallam, Toby Kim, Hye-Young Berner, Nina C. Hanlon, Damien Lee, Kangho Coleman, Jonathan N. Duesberg, Georg S. Sci Rep Article Reliable chemical vapour deposition (CVD) of transition metal dichalcogenides (TMDs) is currently a highly pressing research field, as numerous potential applications rely on the production of high quality films on a macroscopic scale. Here, we show the use of liquid phase exfoliated nanosheets and patterned sputter deposited layers as solid precursors for chemical vapour deposition. TMD monolayers were realized using a close proximity precursor supply in a CVD microreactor setup. A model describing the growth mechanism, which is capable of producing TMD monolayers on arbitrary substrates, is presented. Raman spectroscopy, photoluminescence, X-ray photoelectron spectroscopy, atomic force microscopy, transmission electron microscopy, scanning electron microscopy and electrical transport measurements reveal the high quality of the TMD samples produced. Furthermore, through patterning of the precursor supply, we achieve patterned growth of monolayer TMDs in defined locations, which could be adapted for the facile production of electronic device components. Nature Publishing Group 2014-12-09 /pmc/articles/PMC4260218/ /pubmed/25487822 http://dx.doi.org/10.1038/srep07374 Text en Copyright © 2014, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by-nc-sa/4.0/ This work is licensed under a Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-sa/4.0/ |
spellingShingle | Article O'Brien, Maria McEvoy, Niall Hallam, Toby Kim, Hye-Young Berner, Nina C. Hanlon, Damien Lee, Kangho Coleman, Jonathan N. Duesberg, Georg S. Transition Metal Dichalcogenide Growth via Close Proximity Precursor Supply |
title | Transition Metal Dichalcogenide Growth via Close Proximity Precursor Supply |
title_full | Transition Metal Dichalcogenide Growth via Close Proximity Precursor Supply |
title_fullStr | Transition Metal Dichalcogenide Growth via Close Proximity Precursor Supply |
title_full_unstemmed | Transition Metal Dichalcogenide Growth via Close Proximity Precursor Supply |
title_short | Transition Metal Dichalcogenide Growth via Close Proximity Precursor Supply |
title_sort | transition metal dichalcogenide growth via close proximity precursor supply |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4260218/ https://www.ncbi.nlm.nih.gov/pubmed/25487822 http://dx.doi.org/10.1038/srep07374 |
work_keys_str_mv | AT obrienmaria transitionmetaldichalcogenidegrowthviacloseproximityprecursorsupply AT mcevoyniall transitionmetaldichalcogenidegrowthviacloseproximityprecursorsupply AT hallamtoby transitionmetaldichalcogenidegrowthviacloseproximityprecursorsupply AT kimhyeyoung transitionmetaldichalcogenidegrowthviacloseproximityprecursorsupply AT bernerninac transitionmetaldichalcogenidegrowthviacloseproximityprecursorsupply AT hanlondamien transitionmetaldichalcogenidegrowthviacloseproximityprecursorsupply AT leekangho transitionmetaldichalcogenidegrowthviacloseproximityprecursorsupply AT colemanjonathann transitionmetaldichalcogenidegrowthviacloseproximityprecursorsupply AT duesberggeorgs transitionmetaldichalcogenidegrowthviacloseproximityprecursorsupply |