Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance

An easy and low-cost method to transfer large-scale horizontally aligned Si nanowires onto a substrate is reported. Si nanowires prepared by metal-assisted chemical etching were assembled and anchored to fabricate multiwire photoconductive devices with standard Si technology. Scanning electron micro...

Descripción completa

Detalles Bibliográficos
Autores principales: Zhang, Dalin, Cheng, Gong, Wang, Jianquan, Zhang, Chunqian, Liu, Zhi, Zuo, Yuhua, Zheng, Jun, Xue, Chunlai, Li, Chuanbo, Cheng, Buwen, Wang, Qiming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4266530/
https://www.ncbi.nlm.nih.gov/pubmed/25520603
http://dx.doi.org/10.1186/1556-276X-9-661
Descripción
Sumario:An easy and low-cost method to transfer large-scale horizontally aligned Si nanowires onto a substrate is reported. Si nanowires prepared by metal-assisted chemical etching were assembled and anchored to fabricate multiwire photoconductive devices with standard Si technology. Scanning electron microscopy images showed highly aligned and successfully anchored Si nanowires. Current-voltage tests showed an approximately twofold change in conductivity between the devices in dark and under laser irradiation. Fully reversible light switching ON/OFF response was also achieved with an I(ON)/I(OFF) ratio of 230. Dynamic response measurement showed a fast switching feature with response and recovery times of 10.96 and 19.26 ms, respectively.

Ejemplares similares