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Magnetic and Electronic Evolutions of Hydrogenated VTe(2) Monolayer under Tension

Two-dimensional nanostructures with controllable magnetic and electronic properties are desirable for their versatile applications in quantum devices. Here, we present a first-principles design on their magnetic and electronic switching controlled by tension. We find that hydrogenated VTe(2) monolay...

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Detalles Bibliográficos
Autor principal: Pan, Hui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4268636/
https://www.ncbi.nlm.nih.gov/pubmed/25516240
http://dx.doi.org/10.1038/srep07524
Descripción
Sumario:Two-dimensional nanostructures with controllable magnetic and electronic properties are desirable for their versatile applications in quantum devices. Here, we present a first-principles design on their magnetic and electronic switching controlled by tension. We find that hydrogenated VTe(2) monolayer experiences a transfer from anti-ferromagnetism to ferromagnetism via a turning-point of paramagnetism, and switches from semiconductor, to metal, further to half-metal as tension increases. We show that its anti-ferromagnetism with semiconducting or metallic character under low tension is contributed to super-exchange or mobile-carrier enhanced super-exchange, while the ferromagnetism with half-metallic character under high tension is induced by carrier-mediated double exchange. We further show that the magnetic and electronic evolutions of hydrogenated VS(2) and VSe(2) monolayers under tension follow the same trend as those of hydrogenated VTe(2) monolayer. We predict that tension is efficient and simple to control the magnetic and electronic properties of hydrogenated vanadium dichalcogenides monolayers. The monolayers with controllable magnetism and conductivity may find applications in multi-functional nanodevices.