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Si/Ge intermixing during Ge Stranski–Krastanov growth

The Stranski–Krastanov growth of Ge islands on Si(001) has been widely studied. The morphology changes of Ge islands during growth, from nucleation to hut/island formation and growth, followed by hut-to-dome island transformation and dislocation nucleation of domes, have been well described, even at...

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Detalles Bibliográficos
Autores principales:	Portavoce, Alain, Hoummada, Khalid, Ronda, Antoine, Mangelinck, Dominique, Berbezier, Isabelle
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Beilstein-Institut 2014
Materias:	Full Research Paper
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4273217/ https://www.ncbi.nlm.nih.gov/pubmed/25551065 http://dx.doi.org/10.3762/bjnano.5.246

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