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Advances in NO(2) sensing with individual single-walled carbon nanotube transistors

The charge carrier transport in carbon nanotubes is highly sensitive to certain molecules attached to their surface. This property has generated interest for their application in sensing gases, chemicals and biomolecules. With over a decade of research, a clearer picture of the interactions between...

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Autores principales: Chikkadi, Kiran, Muoth, Matthias, Roman, Cosmin, Haluska, Miroslav, Hierold, Christofer
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4273237/
https://www.ncbi.nlm.nih.gov/pubmed/25551046
http://dx.doi.org/10.3762/bjnano.5.227
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author Chikkadi, Kiran
Muoth, Matthias
Roman, Cosmin
Haluska, Miroslav
Hierold, Christofer
author_facet Chikkadi, Kiran
Muoth, Matthias
Roman, Cosmin
Haluska, Miroslav
Hierold, Christofer
author_sort Chikkadi, Kiran
collection PubMed
description The charge carrier transport in carbon nanotubes is highly sensitive to certain molecules attached to their surface. This property has generated interest for their application in sensing gases, chemicals and biomolecules. With over a decade of research, a clearer picture of the interactions between the carbon nanotube and its surroundings has been achieved. In this review, we intend to summarize the current knowledge on this topic, focusing not only on the effect of adsorbates but also the effect of dielectric charge traps on the electrical transport in single-walled carbon nanotube transistors that are to be used in sensing applications. Recently, contact-passivated, open-channel individual single-walled carbon nanotube field-effect transistors have been shown to be operational at room temperature with ultra-low power consumption. Sensor recovery within minutes through UV illumination or self-heating has been shown. Improvements in fabrication processes aimed at reducing the impact of charge traps have reduced the hysteresis, drift and low-frequency noise in carbon nanotube transistors. While open challenges such as large-scale fabrication, selectivity tuning and noise reduction still remain, these results demonstrate considerable progress in transforming the promise of carbon nanotube properties into functional ultra-low power, highly sensitive gas sensors.
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spelling pubmed-42732372014-12-30 Advances in NO(2) sensing with individual single-walled carbon nanotube transistors Chikkadi, Kiran Muoth, Matthias Roman, Cosmin Haluska, Miroslav Hierold, Christofer Beilstein J Nanotechnol Review The charge carrier transport in carbon nanotubes is highly sensitive to certain molecules attached to their surface. This property has generated interest for their application in sensing gases, chemicals and biomolecules. With over a decade of research, a clearer picture of the interactions between the carbon nanotube and its surroundings has been achieved. In this review, we intend to summarize the current knowledge on this topic, focusing not only on the effect of adsorbates but also the effect of dielectric charge traps on the electrical transport in single-walled carbon nanotube transistors that are to be used in sensing applications. Recently, contact-passivated, open-channel individual single-walled carbon nanotube field-effect transistors have been shown to be operational at room temperature with ultra-low power consumption. Sensor recovery within minutes through UV illumination or self-heating has been shown. Improvements in fabrication processes aimed at reducing the impact of charge traps have reduced the hysteresis, drift and low-frequency noise in carbon nanotube transistors. While open challenges such as large-scale fabrication, selectivity tuning and noise reduction still remain, these results demonstrate considerable progress in transforming the promise of carbon nanotube properties into functional ultra-low power, highly sensitive gas sensors. Beilstein-Institut 2014-11-20 /pmc/articles/PMC4273237/ /pubmed/25551046 http://dx.doi.org/10.3762/bjnano.5.227 Text en Copyright © 2014, Chikkadi et al. https://creativecommons.org/licenses/by/2.0https://www.beilstein-journals.org/bjnano/termsThis is an Open Access article under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. The license is subject to the Beilstein Journal of Nanotechnology terms and conditions: (https://www.beilstein-journals.org/bjnano/terms)
spellingShingle Review
Chikkadi, Kiran
Muoth, Matthias
Roman, Cosmin
Haluska, Miroslav
Hierold, Christofer
Advances in NO(2) sensing with individual single-walled carbon nanotube transistors
title Advances in NO(2) sensing with individual single-walled carbon nanotube transistors
title_full Advances in NO(2) sensing with individual single-walled carbon nanotube transistors
title_fullStr Advances in NO(2) sensing with individual single-walled carbon nanotube transistors
title_full_unstemmed Advances in NO(2) sensing with individual single-walled carbon nanotube transistors
title_short Advances in NO(2) sensing with individual single-walled carbon nanotube transistors
title_sort advances in no(2) sensing with individual single-walled carbon nanotube transistors
topic Review
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4273237/
https://www.ncbi.nlm.nih.gov/pubmed/25551046
http://dx.doi.org/10.3762/bjnano.5.227
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