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Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization
A low cost, highly rectifying, nano heterojunction (p-ZnO/n-Si) diode was fabricated using solution-processed, p-type, ZnO nanoparticles and an n-type Si substrate. p-type ZnO nanoparticles were synthesized using a chemical synthesis route and characterized by XRD and a Hall effect measurement syste...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Beilstein-Institut
2014
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4273239/ https://www.ncbi.nlm.nih.gov/pubmed/25551049 http://dx.doi.org/10.3762/bjnano.5.230 |
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author | Kabra, Vinay Aamir, Lubna Malik, M M |
author_facet | Kabra, Vinay Aamir, Lubna Malik, M M |
author_sort | Kabra, Vinay |
collection | PubMed |
description | A low cost, highly rectifying, nano heterojunction (p-ZnO/n-Si) diode was fabricated using solution-processed, p-type, ZnO nanoparticles and an n-type Si substrate. p-type ZnO nanoparticles were synthesized using a chemical synthesis route and characterized by XRD and a Hall effect measurement system. The device was fabricated by forming thin film of synthesized p-ZnO nanoparticles on an n-Si substrate using a dip coating technique. The device was then characterized by current–voltage (I–V) and capacitance–voltage (C–V) measurements. The effect of UV illumination on the I–V characteristics was also explored and indicated the formation of a highly rectifying, nano heterojunction with a rectification ratio of 101 at 3 V, which increased nearly 2.5 times (232 at 3 V) under UV illumination. However, the cut-in voltage decreases from 1.5 V to 0.9 V under UV illumination. The fabricated device could be used in switches, rectifiers, clipper and clamper circuits, BJTs, MOSFETs and other electronic circuitry. |
format | Online Article Text |
id | pubmed-4273239 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2014 |
publisher | Beilstein-Institut |
record_format | MEDLINE/PubMed |
spelling | pubmed-42732392014-12-30 Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization Kabra, Vinay Aamir, Lubna Malik, M M Beilstein J Nanotechnol Full Research Paper A low cost, highly rectifying, nano heterojunction (p-ZnO/n-Si) diode was fabricated using solution-processed, p-type, ZnO nanoparticles and an n-type Si substrate. p-type ZnO nanoparticles were synthesized using a chemical synthesis route and characterized by XRD and a Hall effect measurement system. The device was fabricated by forming thin film of synthesized p-ZnO nanoparticles on an n-Si substrate using a dip coating technique. The device was then characterized by current–voltage (I–V) and capacitance–voltage (C–V) measurements. The effect of UV illumination on the I–V characteristics was also explored and indicated the formation of a highly rectifying, nano heterojunction with a rectification ratio of 101 at 3 V, which increased nearly 2.5 times (232 at 3 V) under UV illumination. However, the cut-in voltage decreases from 1.5 V to 0.9 V under UV illumination. The fabricated device could be used in switches, rectifiers, clipper and clamper circuits, BJTs, MOSFETs and other electronic circuitry. Beilstein-Institut 2014-11-24 /pmc/articles/PMC4273239/ /pubmed/25551049 http://dx.doi.org/10.3762/bjnano.5.230 Text en Copyright © 2014, Kabra et al. https://creativecommons.org/licenses/by/2.0https://www.beilstein-journals.org/bjnano/termsThis is an Open Access article under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. The license is subject to the Beilstein Journal of Nanotechnology terms and conditions: (https://www.beilstein-journals.org/bjnano/terms) |
spellingShingle | Full Research Paper Kabra, Vinay Aamir, Lubna Malik, M M Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization |
title | Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization |
title_full | Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization |
title_fullStr | Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization |
title_full_unstemmed | Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization |
title_short | Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization |
title_sort | low cost, p-zno/n-si, rectifying, nano heterojunction diode: fabrication and electrical characterization |
topic | Full Research Paper |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4273239/ https://www.ncbi.nlm.nih.gov/pubmed/25551049 http://dx.doi.org/10.3762/bjnano.5.230 |
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