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Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization
A low cost, highly rectifying, nano heterojunction (p-ZnO/n-Si) diode was fabricated using solution-processed, p-type, ZnO nanoparticles and an n-type Si substrate. p-type ZnO nanoparticles were synthesized using a chemical synthesis route and characterized by XRD and a Hall effect measurement syste...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Beilstein-Institut
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4273239/ https://www.ncbi.nlm.nih.gov/pubmed/25551049 http://dx.doi.org/10.3762/bjnano.5.230 |