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In-situ and tunable nitrogen-doping of MoS(2) nanosheets

Molybdenum disulfide (MoS(2)) nanosheets have unique physical and chemical properties, which make it a perfect candidate for next generation electronic and energy storage applications. Herein, we show the successful synthesis of nitrogen-doped MoS(2) nanosheets by a simple, effective and large-scale...

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Detalles Bibliográficos
Autores principales: Qin, Si, Lei, Weiwei, Liu, Dan, Chen, Ying
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4274519/
https://www.ncbi.nlm.nih.gov/pubmed/25533086
http://dx.doi.org/10.1038/srep07582
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author Qin, Si
Lei, Weiwei
Liu, Dan
Chen, Ying
author_facet Qin, Si
Lei, Weiwei
Liu, Dan
Chen, Ying
author_sort Qin, Si
collection PubMed
description Molybdenum disulfide (MoS(2)) nanosheets have unique physical and chemical properties, which make it a perfect candidate for next generation electronic and energy storage applications. Herein, we show the successful synthesis of nitrogen-doped MoS(2) nanosheets by a simple, effective and large-scale approach. MoS(2) nanosheets synthesised by this method show a porous structure formed by curled and overlapped nanosheets with well-defined edges. Analysis of the nanosheets shows that they have an enlarged interlayer distance and high specific surface area. X-ray photoelectron spectroscopy analysis shows the nanosheets have Mo-N bond indicating successful nitrogen doping. The nitrogen content of the product can be modulated by adjusting the ratio of starting materials easily within the range from ca. 5.8 to 7.6 at%.
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spelling pubmed-42745192014-12-29 In-situ and tunable nitrogen-doping of MoS(2) nanosheets Qin, Si Lei, Weiwei Liu, Dan Chen, Ying Sci Rep Article Molybdenum disulfide (MoS(2)) nanosheets have unique physical and chemical properties, which make it a perfect candidate for next generation electronic and energy storage applications. Herein, we show the successful synthesis of nitrogen-doped MoS(2) nanosheets by a simple, effective and large-scale approach. MoS(2) nanosheets synthesised by this method show a porous structure formed by curled and overlapped nanosheets with well-defined edges. Analysis of the nanosheets shows that they have an enlarged interlayer distance and high specific surface area. X-ray photoelectron spectroscopy analysis shows the nanosheets have Mo-N bond indicating successful nitrogen doping. The nitrogen content of the product can be modulated by adjusting the ratio of starting materials easily within the range from ca. 5.8 to 7.6 at%. Nature Publishing Group 2014-12-23 /pmc/articles/PMC4274519/ /pubmed/25533086 http://dx.doi.org/10.1038/srep07582 Text en Copyright © 2014, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by-nc-sa/4.0/ This work is licensed under a Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-sa/4.0/
spellingShingle Article
Qin, Si
Lei, Weiwei
Liu, Dan
Chen, Ying
In-situ and tunable nitrogen-doping of MoS(2) nanosheets
title In-situ and tunable nitrogen-doping of MoS(2) nanosheets
title_full In-situ and tunable nitrogen-doping of MoS(2) nanosheets
title_fullStr In-situ and tunable nitrogen-doping of MoS(2) nanosheets
title_full_unstemmed In-situ and tunable nitrogen-doping of MoS(2) nanosheets
title_short In-situ and tunable nitrogen-doping of MoS(2) nanosheets
title_sort in-situ and tunable nitrogen-doping of mos(2) nanosheets
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4274519/
https://www.ncbi.nlm.nih.gov/pubmed/25533086
http://dx.doi.org/10.1038/srep07582
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