Cargando…
Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers
We report on the demonstration of a new type of axial nanowire LED heterostructures, with the use of self-organized InGaN/AlGaN dot-in-a-wire core-shell nanowire arrays. The large bandgap AlGaN shell is spontaneously formed on the sidewall of the nanowire during the growth of AlGaN barrier of the qu...
Autores principales: | , , , , , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2015
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4296300/ https://www.ncbi.nlm.nih.gov/pubmed/25592057 http://dx.doi.org/10.1038/srep07744 |
_version_ | 1782352953935396864 |
---|---|
author | Nguyen, Hieu Pham Trung Djavid, Mehrdad Woo, Steffi Y. Liu, Xianhe Connie, Ashfiqua T. Sadaf, Sharif Wang, Qi Botton, Gianluigi A. Shih, Ishiang Mi, Zetian |
author_facet | Nguyen, Hieu Pham Trung Djavid, Mehrdad Woo, Steffi Y. Liu, Xianhe Connie, Ashfiqua T. Sadaf, Sharif Wang, Qi Botton, Gianluigi A. Shih, Ishiang Mi, Zetian |
author_sort | Nguyen, Hieu Pham Trung |
collection | PubMed |
description | We report on the demonstration of a new type of axial nanowire LED heterostructures, with the use of self-organized InGaN/AlGaN dot-in-a-wire core-shell nanowire arrays. The large bandgap AlGaN shell is spontaneously formed on the sidewall of the nanowire during the growth of AlGaN barrier of the quantum dot active region. As such, nonradiative surface recombination, that dominates the carrier dynamics of conventional axial nanowire LED structures, can be largely eliminated, leading to significantly increased carrier lifetime from ~0.3 ns to 4.5 ns. The luminescence emission is also enhanced by orders of magnitude. Moreover, the p-doped AlGaN barrier layers can function as distributed electron blocking layers (EBLs), which is found to be more effective in reducing electron overflow, compared to the conventional AlGaN EBL. The device displays strong white-light emission, with a color rendering index of ~95. An output power of >5 mW is measured for a 1 mm × 1 mm device, which is more than 500 times stronger than the conventional InGaN axial nanowire LEDs without AlGaN distributed EBLs. |
format | Online Article Text |
id | pubmed-4296300 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2015 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-42963002015-01-16 Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers Nguyen, Hieu Pham Trung Djavid, Mehrdad Woo, Steffi Y. Liu, Xianhe Connie, Ashfiqua T. Sadaf, Sharif Wang, Qi Botton, Gianluigi A. Shih, Ishiang Mi, Zetian Sci Rep Article We report on the demonstration of a new type of axial nanowire LED heterostructures, with the use of self-organized InGaN/AlGaN dot-in-a-wire core-shell nanowire arrays. The large bandgap AlGaN shell is spontaneously formed on the sidewall of the nanowire during the growth of AlGaN barrier of the quantum dot active region. As such, nonradiative surface recombination, that dominates the carrier dynamics of conventional axial nanowire LED structures, can be largely eliminated, leading to significantly increased carrier lifetime from ~0.3 ns to 4.5 ns. The luminescence emission is also enhanced by orders of magnitude. Moreover, the p-doped AlGaN barrier layers can function as distributed electron blocking layers (EBLs), which is found to be more effective in reducing electron overflow, compared to the conventional AlGaN EBL. The device displays strong white-light emission, with a color rendering index of ~95. An output power of >5 mW is measured for a 1 mm × 1 mm device, which is more than 500 times stronger than the conventional InGaN axial nanowire LEDs without AlGaN distributed EBLs. Nature Publishing Group 2015-01-16 /pmc/articles/PMC4296300/ /pubmed/25592057 http://dx.doi.org/10.1038/srep07744 Text en Copyright © 2015, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by-nc-nd/4.0/ This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/4.0/ |
spellingShingle | Article Nguyen, Hieu Pham Trung Djavid, Mehrdad Woo, Steffi Y. Liu, Xianhe Connie, Ashfiqua T. Sadaf, Sharif Wang, Qi Botton, Gianluigi A. Shih, Ishiang Mi, Zetian Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers |
title | Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers |
title_full | Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers |
title_fullStr | Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers |
title_full_unstemmed | Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers |
title_short | Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers |
title_sort | engineering the carrier dynamics of ingan nanowire white light-emitting diodes by distributed p-algan electron blocking layers |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4296300/ https://www.ncbi.nlm.nih.gov/pubmed/25592057 http://dx.doi.org/10.1038/srep07744 |
work_keys_str_mv | AT nguyenhieuphamtrung engineeringthecarrierdynamicsofingannanowirewhitelightemittingdiodesbydistributedpalganelectronblockinglayers AT djavidmehrdad engineeringthecarrierdynamicsofingannanowirewhitelightemittingdiodesbydistributedpalganelectronblockinglayers AT woosteffiy engineeringthecarrierdynamicsofingannanowirewhitelightemittingdiodesbydistributedpalganelectronblockinglayers AT liuxianhe engineeringthecarrierdynamicsofingannanowirewhitelightemittingdiodesbydistributedpalganelectronblockinglayers AT connieashfiquat engineeringthecarrierdynamicsofingannanowirewhitelightemittingdiodesbydistributedpalganelectronblockinglayers AT sadafsharif engineeringthecarrierdynamicsofingannanowirewhitelightemittingdiodesbydistributedpalganelectronblockinglayers AT wangqi engineeringthecarrierdynamicsofingannanowirewhitelightemittingdiodesbydistributedpalganelectronblockinglayers AT bottongianluigia engineeringthecarrierdynamicsofingannanowirewhitelightemittingdiodesbydistributedpalganelectronblockinglayers AT shihishiang engineeringthecarrierdynamicsofingannanowirewhitelightemittingdiodesbydistributedpalganelectronblockinglayers AT mizetian engineeringthecarrierdynamicsofingannanowirewhitelightemittingdiodesbydistributedpalganelectronblockinglayers |