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CORRIGENDUM: Computational Study of In-Plane Phonon Transport in Si Thin Films

Detalles Bibliográficos
Autores principales: Wang, Xinjiang, Huang, Baoling
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4298739/
https://www.ncbi.nlm.nih.gov/pubmed/25600425
http://dx.doi.org/10.1038/srep07604
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author Wang, Xinjiang
Huang, Baoling
author_facet Wang, Xinjiang
Huang, Baoling
author_sort Wang, Xinjiang
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spelling pubmed-42987392015-02-03 CORRIGENDUM: Computational Study of In-Plane Phonon Transport in Si Thin Films Wang, Xinjiang Huang, Baoling Sci Rep Corrigenda Nature Publishing Group 2015-01-20 /pmc/articles/PMC4298739/ /pubmed/25600425 http://dx.doi.org/10.1038/srep07604 Text en Copyright © 2015, Macmillan Publishers Limited. All rights reserved
spellingShingle Corrigenda
Wang, Xinjiang
Huang, Baoling
CORRIGENDUM: Computational Study of In-Plane Phonon Transport in Si Thin Films
title CORRIGENDUM: Computational Study of In-Plane Phonon Transport in Si Thin Films
title_full CORRIGENDUM: Computational Study of In-Plane Phonon Transport in Si Thin Films
title_fullStr CORRIGENDUM: Computational Study of In-Plane Phonon Transport in Si Thin Films
title_full_unstemmed CORRIGENDUM: Computational Study of In-Plane Phonon Transport in Si Thin Films
title_short CORRIGENDUM: Computational Study of In-Plane Phonon Transport in Si Thin Films
title_sort corrigendum: computational study of in-plane phonon transport in si thin films
topic Corrigenda
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4298739/
https://www.ncbi.nlm.nih.gov/pubmed/25600425
http://dx.doi.org/10.1038/srep07604
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