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Unusual structural and electronic properties of porous silicene and germanene: insights from first-principles calculations
Using first-principles calculations, we investigate the geometric structures and electronic properties of porous silicene and germanene nanosheets, which are the Si and Ge analogues of α−graphyne (referred to as silicyne and germanyne). It is found that the elemental silicyne and germanyne sheets ar...
Autores principales: | , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer US
2015
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4312312/ https://www.ncbi.nlm.nih.gov/pubmed/25852311 http://dx.doi.org/10.1186/s11671-014-0704-3 |
Sumario: | Using first-principles calculations, we investigate the geometric structures and electronic properties of porous silicene and germanene nanosheets, which are the Si and Ge analogues of α−graphyne (referred to as silicyne and germanyne). It is found that the elemental silicyne and germanyne sheets are energetically unfavourable. However, after the C-substitution, the hybrid graphyne-like sheets (c-silicyne/c-germanyne) possess robust energetic and dynamical stabilities. Different from silicene and germanene, c-silicyne is a flat sheet, and c-germanyne is buckled with a distinct half-hilled conformation. Such asymmetric buckling structure causes the semiconducting behaviour into c-germanyne. While in c-silicyne, the semimetallic Dirac-like property is kept at the nonmagnetic state, but a spontaneous antiferromagnetism produces the massive Dirac fermions and opens a sizeable gap between Dirac cones. A tensile strain can further enhance the antiferromagnetism, which also linearly modulates the gap value without altering the direct-bandgap feature. Through strain engineering, c-silicyne can form a type-II band alignment with the MoS (2) sheet. The combined c-silicyne/MoS (2) nanostructure has a high power conversion efficiency beyond 20% for photovoltaic solar cells, enabling a fascinating utilization in the fields of solar energy and nano-devices. |
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