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Misfit accommodation mechanism at the heterointerface between diamond and cubic boron nitride

Diamond and cubic boron nitride (c-BN) are the top two hardest materials on the Earth. Clarifying how the two seemingly incompressible materials can actually join represents one of the most challenging issues in materials science. Here we apply the temperature gradient method to grow the c-BN single...

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Autores principales: Chen, Chunlin, Wang, Zhongchang, Kato, Takeharu, Shibata, Naoya, Taniguchi, Takashi, Ikuhara, Yuichi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Pub. Group 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4339885/
https://www.ncbi.nlm.nih.gov/pubmed/25687399
http://dx.doi.org/10.1038/ncomms7327
_version_ 1782358933538603008
author Chen, Chunlin
Wang, Zhongchang
Kato, Takeharu
Shibata, Naoya
Taniguchi, Takashi
Ikuhara, Yuichi
author_facet Chen, Chunlin
Wang, Zhongchang
Kato, Takeharu
Shibata, Naoya
Taniguchi, Takashi
Ikuhara, Yuichi
author_sort Chen, Chunlin
collection PubMed
description Diamond and cubic boron nitride (c-BN) are the top two hardest materials on the Earth. Clarifying how the two seemingly incompressible materials can actually join represents one of the most challenging issues in materials science. Here we apply the temperature gradient method to grow the c-BN single crystals on diamond and report a successful epitaxial growth. By transmission electron microscopy, we reveal a novel misfit accommodation mechanism for a {111} diamond/c-BN heterointerface, that is, lattice misfit can be accommodated by continuous stacking fault networks, which are connected by periodically arranged hexagonal dislocation loops. The loops are found to comprise six 60° Shockley partial dislocations. Atomically, the carbon in diamond bonds directly to boron in c-BN at the interface, which electronically induces a two-dimensional electron gas and a quasi-1D electrical conductivity. Our findings point to the existence of a novel misfit accommodation mechanism associated with the superhard materials.
format Online
Article
Text
id pubmed-4339885
institution National Center for Biotechnology Information
language English
publishDate 2015
publisher Nature Pub. Group
record_format MEDLINE/PubMed
spelling pubmed-43398852015-03-02 Misfit accommodation mechanism at the heterointerface between diamond and cubic boron nitride Chen, Chunlin Wang, Zhongchang Kato, Takeharu Shibata, Naoya Taniguchi, Takashi Ikuhara, Yuichi Nat Commun Article Diamond and cubic boron nitride (c-BN) are the top two hardest materials on the Earth. Clarifying how the two seemingly incompressible materials can actually join represents one of the most challenging issues in materials science. Here we apply the temperature gradient method to grow the c-BN single crystals on diamond and report a successful epitaxial growth. By transmission electron microscopy, we reveal a novel misfit accommodation mechanism for a {111} diamond/c-BN heterointerface, that is, lattice misfit can be accommodated by continuous stacking fault networks, which are connected by periodically arranged hexagonal dislocation loops. The loops are found to comprise six 60° Shockley partial dislocations. Atomically, the carbon in diamond bonds directly to boron in c-BN at the interface, which electronically induces a two-dimensional electron gas and a quasi-1D electrical conductivity. Our findings point to the existence of a novel misfit accommodation mechanism associated with the superhard materials. Nature Pub. Group 2015-02-17 /pmc/articles/PMC4339885/ /pubmed/25687399 http://dx.doi.org/10.1038/ncomms7327 Text en Copyright © 2015, Nature Publishing Group, a division of Macmillan Publishers Limited. All Rights Reserved. http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Chen, Chunlin
Wang, Zhongchang
Kato, Takeharu
Shibata, Naoya
Taniguchi, Takashi
Ikuhara, Yuichi
Misfit accommodation mechanism at the heterointerface between diamond and cubic boron nitride
title Misfit accommodation mechanism at the heterointerface between diamond and cubic boron nitride
title_full Misfit accommodation mechanism at the heterointerface between diamond and cubic boron nitride
title_fullStr Misfit accommodation mechanism at the heterointerface between diamond and cubic boron nitride
title_full_unstemmed Misfit accommodation mechanism at the heterointerface between diamond and cubic boron nitride
title_short Misfit accommodation mechanism at the heterointerface between diamond and cubic boron nitride
title_sort misfit accommodation mechanism at the heterointerface between diamond and cubic boron nitride
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4339885/
https://www.ncbi.nlm.nih.gov/pubmed/25687399
http://dx.doi.org/10.1038/ncomms7327
work_keys_str_mv AT chenchunlin misfitaccommodationmechanismattheheterointerfacebetweendiamondandcubicboronnitride
AT wangzhongchang misfitaccommodationmechanismattheheterointerfacebetweendiamondandcubicboronnitride
AT katotakeharu misfitaccommodationmechanismattheheterointerfacebetweendiamondandcubicboronnitride
AT shibatanaoya misfitaccommodationmechanismattheheterointerfacebetweendiamondandcubicboronnitride
AT taniguchitakashi misfitaccommodationmechanismattheheterointerfacebetweendiamondandcubicboronnitride
AT ikuharayuichi misfitaccommodationmechanismattheheterointerfacebetweendiamondandcubicboronnitride