Photo-induced optical activity in phase-change memory materials

We demonstrate that optical activity in amorphous isotropic thin films of pure Ge(2)Sb(2)Te(5) and N-doped Ge(2)Sb(2)Te(5)N phase-change memory materials can be induced using rapid photo crystallisation with circularly polarised laser light. The new anisotropic phase transition has been confirmed by...

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Detalles Bibliográficos
Autores principales: Borisenko, Konstantin B., Shanmugam, Janaki, Williams, Benjamin A. O., Ewart, Paul, Gholipour, Behrad, Hewak, Daniel W., Hussain, Rohanah, Jávorfi, Tamás, Siligardi, Giuliano, Kirkland, Angus I.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4350098/
https://www.ncbi.nlm.nih.gov/pubmed/25740351
http://dx.doi.org/10.1038/srep08770

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4350098/
https://www.ncbi.nlm.nih.gov/pubmed/25740351
http://dx.doi.org/10.1038/srep08770

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