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Competition between surface modification and abrasive polishing: a method of controlling the surface atomic structure of 4H-SiC (0001)

The surface atomic step-terrace structure of 4H-SiC greatly affects its performance in power device applications. On the basis of the crystal structure of 4H-SiC, we propose the generation mechanism of the a-b-a*-b* type, a-b type and a-a type step-terrace structures. We demonstrate that the step-te...

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Detalles Bibliográficos
Autores principales: Deng, Hui, Endo, Katsuyoshi, Yamamura, Kazuya
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4353996/
https://www.ncbi.nlm.nih.gov/pubmed/25752524
http://dx.doi.org/10.1038/srep08947

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