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Biologically inspired band-edge laser action from semiconductor with dipole-forbidden band-gap transition
A new approach is proposed to light up band-edge stimulated emission arising from a semiconductor with dipole-forbidden band-gap transition. To illustrate our working principle, here we demonstrate the feasibility on the composite of SnO(2) nanowires (NWs) and chicken albumen. SnO(2) NWs, which mere...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2015
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4355669/ https://www.ncbi.nlm.nih.gov/pubmed/25758749 http://dx.doi.org/10.1038/srep08965 |
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author | Wang, Cih-Su Liau, Chi-Shung Sun, Tzu-Ming Chen, Yu-Chia Lin, Tai-Yuan Chen, Yang-Fang |
author_facet | Wang, Cih-Su Liau, Chi-Shung Sun, Tzu-Ming Chen, Yu-Chia Lin, Tai-Yuan Chen, Yang-Fang |
author_sort | Wang, Cih-Su |
collection | PubMed |
description | A new approach is proposed to light up band-edge stimulated emission arising from a semiconductor with dipole-forbidden band-gap transition. To illustrate our working principle, here we demonstrate the feasibility on the composite of SnO(2) nanowires (NWs) and chicken albumen. SnO(2) NWs, which merely emit visible defect emission, are observed to generate a strong ultraviolet fluorescence centered at 387 nm assisted by chicken albumen at room temperature. In addition, a stunning laser action is further discovered in the albumen/SnO(2) NWs composite system. The underlying mechanism is interpreted in terms of the fluorescence resonance energy transfer (FRET) from the chicken albumen protein to SnO(2) NWs. More importantly, the giant oscillator strength of shallow defect states, which is served orders of magnitude larger than that of the free exciton, plays a decisive role. Our approach therefore shows that bio-materials exhibit a great potential in applications for novel light emitters, which may open up a new avenue for the development of bio-inspired optoelectronic devices. |
format | Online Article Text |
id | pubmed-4355669 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2015 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-43556692015-03-17 Biologically inspired band-edge laser action from semiconductor with dipole-forbidden band-gap transition Wang, Cih-Su Liau, Chi-Shung Sun, Tzu-Ming Chen, Yu-Chia Lin, Tai-Yuan Chen, Yang-Fang Sci Rep Article A new approach is proposed to light up band-edge stimulated emission arising from a semiconductor with dipole-forbidden band-gap transition. To illustrate our working principle, here we demonstrate the feasibility on the composite of SnO(2) nanowires (NWs) and chicken albumen. SnO(2) NWs, which merely emit visible defect emission, are observed to generate a strong ultraviolet fluorescence centered at 387 nm assisted by chicken albumen at room temperature. In addition, a stunning laser action is further discovered in the albumen/SnO(2) NWs composite system. The underlying mechanism is interpreted in terms of the fluorescence resonance energy transfer (FRET) from the chicken albumen protein to SnO(2) NWs. More importantly, the giant oscillator strength of shallow defect states, which is served orders of magnitude larger than that of the free exciton, plays a decisive role. Our approach therefore shows that bio-materials exhibit a great potential in applications for novel light emitters, which may open up a new avenue for the development of bio-inspired optoelectronic devices. Nature Publishing Group 2015-03-11 /pmc/articles/PMC4355669/ /pubmed/25758749 http://dx.doi.org/10.1038/srep08965 Text en Copyright © 2015, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Wang, Cih-Su Liau, Chi-Shung Sun, Tzu-Ming Chen, Yu-Chia Lin, Tai-Yuan Chen, Yang-Fang Biologically inspired band-edge laser action from semiconductor with dipole-forbidden band-gap transition |
title | Biologically inspired band-edge laser action from semiconductor with dipole-forbidden band-gap transition |
title_full | Biologically inspired band-edge laser action from semiconductor with dipole-forbidden band-gap transition |
title_fullStr | Biologically inspired band-edge laser action from semiconductor with dipole-forbidden band-gap transition |
title_full_unstemmed | Biologically inspired band-edge laser action from semiconductor with dipole-forbidden band-gap transition |
title_short | Biologically inspired band-edge laser action from semiconductor with dipole-forbidden band-gap transition |
title_sort | biologically inspired band-edge laser action from semiconductor with dipole-forbidden band-gap transition |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4355669/ https://www.ncbi.nlm.nih.gov/pubmed/25758749 http://dx.doi.org/10.1038/srep08965 |
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