Carbon p Electron Ferromagnetism in Silicon Carbide

Ferromagnetism can occur in wide-band gap semiconductors as well as in carbon-based materials when specific defects are introduced. It is thus desirable to establish a direct relation between the defects and the resulting ferromagnetism. Here, we contribute to revealing the origin of defect-induced...

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Detalles Bibliográficos
Autores principales: Wang, Yutian, Liu, Yu, Wang, Gang, Anwand, Wolfgang, Jenkins, Catherine A., Arenholz, Elke, Munnik, Frans, Gordan, Ovidiu D., Salvan, Georgeta, Zahn, Dietrich R. T., Chen, Xiaolong, Gemming, Sibylle, Helm, Manfred, Zhou, Shengqiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4355737/
https://www.ncbi.nlm.nih.gov/pubmed/25758040
http://dx.doi.org/10.1038/srep08999

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4355737/
https://www.ncbi.nlm.nih.gov/pubmed/25758040
http://dx.doi.org/10.1038/srep08999

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