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Origin of Anomalous Piezoresistive Effects in VLS Grown Si Nanowires
[Image: see text] Although the various effects of strain on silicon are subject of intensive research since the 1950s the physical background of anomalous piezoresistive effects in Si nanowires (NWs) is still under debate. Recent investigations concur in that due to the high surface-to-volume ratio...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2015
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4358075/ https://www.ncbi.nlm.nih.gov/pubmed/25651106 http://dx.doi.org/10.1021/nl5044743 |