Effect of Threading Dislocations on the Quality Factor of InGaN/GaN Microdisk Cavities

[Image: see text] In spite of the theoretical advantages associated with nitride microcavities, the quality factors of devices with embedded indium gallium nitride (InGaN) or gallium nitride (GaN) optical emitters still remain low. In this work we identify threading dislocations (TDs) as a major lim...

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Detalles Bibliográficos
Autores principales: Puchtler, Tim J., Woolf, Alexander, Zhu, Tongtong, Gachet, David, Hu, Evelyn L., Oliver, Rachel A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2014
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4372119/
https://www.ncbi.nlm.nih.gov/pubmed/25839048
http://dx.doi.org/10.1021/ph500426g

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4372119/
https://www.ncbi.nlm.nih.gov/pubmed/25839048
http://dx.doi.org/10.1021/ph500426g

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