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Effect of Threading Dislocations on the Quality Factor of InGaN/GaN Microdisk Cavities
[Image: see text] In spite of the theoretical advantages associated with nitride microcavities, the quality factors of devices with embedded indium gallium nitride (InGaN) or gallium nitride (GaN) optical emitters still remain low. In this work we identify threading dislocations (TDs) as a major lim...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American
Chemical Society
2014
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4372119/ https://www.ncbi.nlm.nih.gov/pubmed/25839048 http://dx.doi.org/10.1021/ph500426g |