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High-resolution characterization of the forbidden Si 200 and Si 222 reflections
The occurrence of the basis-forbidden Si 200 and Si 222 reflections in specular X-ray diffraction ω–2Θ scans is investigated in detail as a function of the in-plane sample orientation Φ. This is done for two different diffractometer types with low and high angular divergence perpendicular to the dif...
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Formato: | Online Artículo Texto |
Lenguaje: | English |
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International Union of Crystallography
2015
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4379439/ https://www.ncbi.nlm.nih.gov/pubmed/25844081 http://dx.doi.org/10.1107/S1600576715004732 |
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author | Zaumseil, Peter |
author_facet | Zaumseil, Peter |
author_sort | Zaumseil, Peter |
collection | PubMed |
description | The occurrence of the basis-forbidden Si 200 and Si 222 reflections in specular X-ray diffraction ω–2Θ scans is investigated in detail as a function of the in-plane sample orientation Φ. This is done for two different diffractometer types with low and high angular divergence perpendicular to the diffraction plane. It is shown that the reflections appear for well defined conditions as a result of multiple diffraction, and not only do the obtained peaks vary in intensity but additional features like shoulders or even subpeaks may occur within a 2Θ range of about ±2.5°. This has important consequences for the detection and verification of layer peaks in the corresponding angular range. |
format | Online Article Text |
id | pubmed-4379439 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2015 |
publisher | International Union of Crystallography |
record_format | MEDLINE/PubMed |
spelling | pubmed-43794392015-04-03 High-resolution characterization of the forbidden Si 200 and Si 222 reflections Zaumseil, Peter J Appl Crystallogr Research Papers The occurrence of the basis-forbidden Si 200 and Si 222 reflections in specular X-ray diffraction ω–2Θ scans is investigated in detail as a function of the in-plane sample orientation Φ. This is done for two different diffractometer types with low and high angular divergence perpendicular to the diffraction plane. It is shown that the reflections appear for well defined conditions as a result of multiple diffraction, and not only do the obtained peaks vary in intensity but additional features like shoulders or even subpeaks may occur within a 2Θ range of about ±2.5°. This has important consequences for the detection and verification of layer peaks in the corresponding angular range. International Union of Crystallography 2015-03-24 /pmc/articles/PMC4379439/ /pubmed/25844081 http://dx.doi.org/10.1107/S1600576715004732 Text en © Peter Zaumseil 2015 http://creativecommons.org/licenses/by/2.0/uk/ This is an open-access article distributed under the terms of the Creative Commons Attribution Licence, which permits unrestricted use, distribution, and reproduction in any medium, provided the original authors and source are cited. |
spellingShingle | Research Papers Zaumseil, Peter High-resolution characterization of the forbidden Si 200 and Si 222 reflections |
title | High-resolution characterization of the forbidden Si 200 and Si 222 reflections
|
title_full | High-resolution characterization of the forbidden Si 200 and Si 222 reflections
|
title_fullStr | High-resolution characterization of the forbidden Si 200 and Si 222 reflections
|
title_full_unstemmed | High-resolution characterization of the forbidden Si 200 and Si 222 reflections
|
title_short | High-resolution characterization of the forbidden Si 200 and Si 222 reflections
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title_sort | high-resolution characterization of the forbidden si 200 and si 222 reflections |
topic | Research Papers |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4379439/ https://www.ncbi.nlm.nih.gov/pubmed/25844081 http://dx.doi.org/10.1107/S1600576715004732 |
work_keys_str_mv | AT zaumseilpeter highresolutioncharacterizationoftheforbiddensi200andsi222reflections |