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High-resolution characterization of the forbidden Si 200 and Si 222 reflections

The occurrence of the basis-forbidden Si 200 and Si 222 reflections in specular X-ray diffraction ω–2Θ scans is investigated in detail as a function of the in-plane sample orientation Φ. This is done for two different diffractometer types with low and high angular divergence perpendicular to the dif...

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Autor principal: Zaumseil, Peter
Formato: Online Artículo Texto
Lenguaje:English
Publicado: International Union of Crystallography 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4379439/
https://www.ncbi.nlm.nih.gov/pubmed/25844081
http://dx.doi.org/10.1107/S1600576715004732
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author Zaumseil, Peter
author_facet Zaumseil, Peter
author_sort Zaumseil, Peter
collection PubMed
description The occurrence of the basis-forbidden Si 200 and Si 222 reflections in specular X-ray diffraction ω–2Θ scans is investigated in detail as a function of the in-plane sample orientation Φ. This is done for two different diffractometer types with low and high angular divergence perpendicular to the diffraction plane. It is shown that the reflections appear for well defined conditions as a result of multiple diffraction, and not only do the obtained peaks vary in intensity but additional features like shoulders or even subpeaks may occur within a 2Θ range of about ±2.5°. This has important consequences for the detection and verification of layer peaks in the corresponding angular range.
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spelling pubmed-43794392015-04-03 High-resolution characterization of the forbidden Si 200 and Si 222 reflections Zaumseil, Peter J Appl Crystallogr Research Papers The occurrence of the basis-forbidden Si 200 and Si 222 reflections in specular X-ray diffraction ω–2Θ scans is investigated in detail as a function of the in-plane sample orientation Φ. This is done for two different diffractometer types with low and high angular divergence perpendicular to the diffraction plane. It is shown that the reflections appear for well defined conditions as a result of multiple diffraction, and not only do the obtained peaks vary in intensity but additional features like shoulders or even subpeaks may occur within a 2Θ range of about ±2.5°. This has important consequences for the detection and verification of layer peaks in the corresponding angular range. International Union of Crystallography 2015-03-24 /pmc/articles/PMC4379439/ /pubmed/25844081 http://dx.doi.org/10.1107/S1600576715004732 Text en © Peter Zaumseil 2015 http://creativecommons.org/licenses/by/2.0/uk/ This is an open-access article distributed under the terms of the Creative Commons Attribution Licence, which permits unrestricted use, distribution, and reproduction in any medium, provided the original authors and source are cited.
spellingShingle Research Papers
Zaumseil, Peter
High-resolution characterization of the forbidden Si 200 and Si 222 reflections
title High-resolution characterization of the forbidden Si 200 and Si 222 reflections
title_full High-resolution characterization of the forbidden Si 200 and Si 222 reflections
title_fullStr High-resolution characterization of the forbidden Si 200 and Si 222 reflections
title_full_unstemmed High-resolution characterization of the forbidden Si 200 and Si 222 reflections
title_short High-resolution characterization of the forbidden Si 200 and Si 222 reflections
title_sort high-resolution characterization of the forbidden si 200 and si 222 reflections
topic Research Papers
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4379439/
https://www.ncbi.nlm.nih.gov/pubmed/25844081
http://dx.doi.org/10.1107/S1600576715004732
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