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High-resolution characterization of the forbidden Si 200 and Si 222 reflections
The occurrence of the basis-forbidden Si 200 and Si 222 reflections in specular X-ray diffraction ω–2Θ scans is investigated in detail as a function of the in-plane sample orientation Φ. This is done for two different diffractometer types with low and high angular divergence perpendicular to the dif...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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International Union of Crystallography
2015
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4379439/ https://www.ncbi.nlm.nih.gov/pubmed/25844081 http://dx.doi.org/10.1107/S1600576715004732 |