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Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide

Semiconducting two-dimensional crystals are currently receiving significant attention because of their great potential to be an ultrathin body for efficient electrostatic modulation, which enables to overcome the limitations of silicon technology. Here we report that, as a key building block for two...

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Autores principales: Li, Hua-Min, Lee, Daeyeong, Qu, Deshun, Liu, Xiaochi, Ryu, Jungjin, Seabaugh, Alan, Yoo, Won Jong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Pub. Group 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4383009/
https://www.ncbi.nlm.nih.gov/pubmed/25800613
http://dx.doi.org/10.1038/ncomms7564
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author Li, Hua-Min
Lee, Daeyeong
Qu, Deshun
Liu, Xiaochi
Ryu, Jungjin
Seabaugh, Alan
Yoo, Won Jong
author_facet Li, Hua-Min
Lee, Daeyeong
Qu, Deshun
Liu, Xiaochi
Ryu, Jungjin
Seabaugh, Alan
Yoo, Won Jong
author_sort Li, Hua-Min
collection PubMed
description Semiconducting two-dimensional crystals are currently receiving significant attention because of their great potential to be an ultrathin body for efficient electrostatic modulation, which enables to overcome the limitations of silicon technology. Here we report that, as a key building block for two-dimensional semiconductor devices, vertical p–n junctions are fabricated in ultrathin MoS(2) by introducing AuCl(3) and benzyl viologen dopants. Unlike usual unipolar MoS(2), the MoS(2) p–n junctions show ambipolar carrier transport, current rectification via modulation of potential barrier in films thicker than 8 nm and reversed current rectification via tunnelling in films thinner than 8 nm. The ultimate thinness of the vertical p–n homogeneous junctions in MoS(2) is experimentally found to be 3 nm, and the chemical doping depth is found to be 1.5 nm. The ultrathin MoS(2) p–n junctions present a significant potential of the two-dimensional crystals for flexible, transparent, high-efficiency electronic and optoelectronic applications.
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spelling pubmed-43830092015-04-07 Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide Li, Hua-Min Lee, Daeyeong Qu, Deshun Liu, Xiaochi Ryu, Jungjin Seabaugh, Alan Yoo, Won Jong Nat Commun Article Semiconducting two-dimensional crystals are currently receiving significant attention because of their great potential to be an ultrathin body for efficient electrostatic modulation, which enables to overcome the limitations of silicon technology. Here we report that, as a key building block for two-dimensional semiconductor devices, vertical p–n junctions are fabricated in ultrathin MoS(2) by introducing AuCl(3) and benzyl viologen dopants. Unlike usual unipolar MoS(2), the MoS(2) p–n junctions show ambipolar carrier transport, current rectification via modulation of potential barrier in films thicker than 8 nm and reversed current rectification via tunnelling in films thinner than 8 nm. The ultimate thinness of the vertical p–n homogeneous junctions in MoS(2) is experimentally found to be 3 nm, and the chemical doping depth is found to be 1.5 nm. The ultrathin MoS(2) p–n junctions present a significant potential of the two-dimensional crystals for flexible, transparent, high-efficiency electronic and optoelectronic applications. Nature Pub. Group 2015-03-24 /pmc/articles/PMC4383009/ /pubmed/25800613 http://dx.doi.org/10.1038/ncomms7564 Text en Copyright © 2015, Nature Publishing Group, a division of Macmillan Publishers Limited. All Rights Reserved. http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Li, Hua-Min
Lee, Daeyeong
Qu, Deshun
Liu, Xiaochi
Ryu, Jungjin
Seabaugh, Alan
Yoo, Won Jong
Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide
title Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide
title_full Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide
title_fullStr Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide
title_full_unstemmed Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide
title_short Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide
title_sort ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4383009/
https://www.ncbi.nlm.nih.gov/pubmed/25800613
http://dx.doi.org/10.1038/ncomms7564
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