Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy

We have successfully grown ultrathin continuous aluminum film by molecular beam epitaxy. This percolative aluminum film is single crystalline and strain free as characterized by transmission electron microscopy and atomic force microscopy. The weak anti-localization effect is observed in the tempera...

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Detalles Bibliográficos
Autores principales: Lin, Shih-Wei, Wu, Yue-Han, Chang, Li, Liang, Chi-Te, Lin, Sheng-Di
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385055/
https://www.ncbi.nlm.nih.gov/pubmed/25852367
http://dx.doi.org/10.1186/s11671-015-0782-x
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author Lin, Shih-Wei
Wu, Yue-Han
Chang, Li
Liang, Chi-Te
Lin, Sheng-Di
author_facet Lin, Shih-Wei
Wu, Yue-Han
Chang, Li
Liang, Chi-Te
Lin, Sheng-Di
author_sort Lin, Shih-Wei
collection PubMed
description We have successfully grown ultrathin continuous aluminum film by molecular beam epitaxy. This percolative aluminum film is single crystalline and strain free as characterized by transmission electron microscopy and atomic force microscopy. The weak anti-localization effect is observed in the temperature range of 1.4 to 10 K with this sample, and it reveals that, for the first time, the dephasing is purely caused by electron-electron inelastic scattering in aluminum.
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spelling pubmed-43850552015-04-07 Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy Lin, Shih-Wei Wu, Yue-Han Chang, Li Liang, Chi-Te Lin, Sheng-Di Nanoscale Res Lett Nano Express We have successfully grown ultrathin continuous aluminum film by molecular beam epitaxy. This percolative aluminum film is single crystalline and strain free as characterized by transmission electron microscopy and atomic force microscopy. The weak anti-localization effect is observed in the temperature range of 1.4 to 10 K with this sample, and it reveals that, for the first time, the dephasing is purely caused by electron-electron inelastic scattering in aluminum. Springer US 2015-02-18 /pmc/articles/PMC4385055/ /pubmed/25852367 http://dx.doi.org/10.1186/s11671-015-0782-x Text en © Lin et al.; licensee Springer. 2015 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.
spellingShingle Nano Express
Lin, Shih-Wei
Wu, Yue-Han
Chang, Li
Liang, Chi-Te
Lin, Sheng-Di
Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy
title Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy
title_full Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy
title_fullStr Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy
title_full_unstemmed Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy
title_short Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy
title_sort pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385055/
https://www.ncbi.nlm.nih.gov/pubmed/25852367
http://dx.doi.org/10.1186/s11671-015-0782-x
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