High-performance HfO(x)/AlO(y)-based resistive switching memory cross-point array fabricated by atomic layer deposition

Resistive switching memory cross-point arrays with TiN/HfO(x)/AlO(y)/Pt structure were fabricated. The bi-layered resistive switching films of 5-nm HfO(x) and 3-nm AlO(y) were deposited by atomic layer deposition (ALD). Excellent device performances such as low switching voltage, large resistance ra...

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Detalles Bibliográficos
Autores principales: Chen, Zhe, Zhang, Feifei, Chen, Bing, Zheng, Yang, Gao, Bin, Liu, Lifeng, Liu, Xiaoyan, Kang, Jinfeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385114/
https://www.ncbi.nlm.nih.gov/pubmed/25852366
http://dx.doi.org/10.1186/s11671-015-0738-1
Descripción
Sumario:Resistive switching memory cross-point arrays with TiN/HfO(x)/AlO(y)/Pt structure were fabricated. The bi-layered resistive switching films of 5-nm HfO(x) and 3-nm AlO(y) were deposited by atomic layer deposition (ALD). Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the fabricated 24 by 24 arrays. In addition, multi-level data storage capability and robust reliability characteristics were also presented. The achievements demonstrated the great potential of ALD-fabricated HfO(x)/AlO(y) bi-layers for the application of next-generation nonvolatile memory.

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