High-performance HfO(x)/AlO(y)-based resistive switching memory cross-point array fabricated by atomic layer deposition

Resistive switching memory cross-point arrays with TiN/HfO(x)/AlO(y)/Pt structure were fabricated. The bi-layered resistive switching films of 5-nm HfO(x) and 3-nm AlO(y) were deposited by atomic layer deposition (ALD). Excellent device performances such as low switching voltage, large resistance ra...

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Detalles Bibliográficos
Autores principales: Chen, Zhe, Zhang, Feifei, Chen, Bing, Zheng, Yang, Gao, Bin, Liu, Lifeng, Liu, Xiaoyan, Kang, Jinfeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385114/
https://www.ncbi.nlm.nih.gov/pubmed/25852366
http://dx.doi.org/10.1186/s11671-015-0738-1
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author Chen, Zhe
Zhang, Feifei
Chen, Bing
Zheng, Yang
Gao, Bin
Liu, Lifeng
Liu, Xiaoyan
Kang, Jinfeng
author_facet Chen, Zhe
Zhang, Feifei
Chen, Bing
Zheng, Yang
Gao, Bin
Liu, Lifeng
Liu, Xiaoyan
Kang, Jinfeng
author_sort Chen, Zhe
collection PubMed
description Resistive switching memory cross-point arrays with TiN/HfO(x)/AlO(y)/Pt structure were fabricated. The bi-layered resistive switching films of 5-nm HfO(x) and 3-nm AlO(y) were deposited by atomic layer deposition (ALD). Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the fabricated 24 by 24 arrays. In addition, multi-level data storage capability and robust reliability characteristics were also presented. The achievements demonstrated the great potential of ALD-fabricated HfO(x)/AlO(y) bi-layers for the application of next-generation nonvolatile memory.
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spelling pubmed-43851142015-04-07 High-performance HfO(x)/AlO(y)-based resistive switching memory cross-point array fabricated by atomic layer deposition Chen, Zhe Zhang, Feifei Chen, Bing Zheng, Yang Gao, Bin Liu, Lifeng Liu, Xiaoyan Kang, Jinfeng Nanoscale Res Lett Nano Express Resistive switching memory cross-point arrays with TiN/HfO(x)/AlO(y)/Pt structure were fabricated. The bi-layered resistive switching films of 5-nm HfO(x) and 3-nm AlO(y) were deposited by atomic layer deposition (ALD). Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the fabricated 24 by 24 arrays. In addition, multi-level data storage capability and robust reliability characteristics were also presented. The achievements demonstrated the great potential of ALD-fabricated HfO(x)/AlO(y) bi-layers for the application of next-generation nonvolatile memory. Springer US 2015-02-18 /pmc/articles/PMC4385114/ /pubmed/25852366 http://dx.doi.org/10.1186/s11671-015-0738-1 Text en © Chen et al.; licensee Springer. 2015 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.
spellingShingle Nano Express
Chen, Zhe
Zhang, Feifei
Chen, Bing
Zheng, Yang
Gao, Bin
Liu, Lifeng
Liu, Xiaoyan
Kang, Jinfeng
High-performance HfO(x)/AlO(y)-based resistive switching memory cross-point array fabricated by atomic layer deposition
title High-performance HfO(x)/AlO(y)-based resistive switching memory cross-point array fabricated by atomic layer deposition
title_full High-performance HfO(x)/AlO(y)-based resistive switching memory cross-point array fabricated by atomic layer deposition
title_fullStr High-performance HfO(x)/AlO(y)-based resistive switching memory cross-point array fabricated by atomic layer deposition
title_full_unstemmed High-performance HfO(x)/AlO(y)-based resistive switching memory cross-point array fabricated by atomic layer deposition
title_short High-performance HfO(x)/AlO(y)-based resistive switching memory cross-point array fabricated by atomic layer deposition
title_sort high-performance hfo(x)/alo(y)-based resistive switching memory cross-point array fabricated by atomic layer deposition
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385114/
https://www.ncbi.nlm.nih.gov/pubmed/25852366
http://dx.doi.org/10.1186/s11671-015-0738-1
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