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Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures

In this paper, we successfully grow GaAs/GaSb core-shell heterostructure nanowires (NWs) by molecular beam epitaxy (MBE). The as-grown GaSb shell layer forms a wurtzite structure instead of the zinc blende structure that has been commonly reported. Meanwhile, a bulgy GaSb nanoplate also appears on t...

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Detalles Bibliográficos
Autores principales: Shi, Suixing, Zhang, Zhi, Lu, Zhenyu, Shu, Haibo, Chen, Pingping, Li, Ning, Zou, Jin, Lu, Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385115/
https://www.ncbi.nlm.nih.gov/pubmed/25852403
http://dx.doi.org/10.1186/s11671-015-0812-8
Descripción
Sumario:In this paper, we successfully grow GaAs/GaSb core-shell heterostructure nanowires (NWs) by molecular beam epitaxy (MBE). The as-grown GaSb shell layer forms a wurtzite structure instead of the zinc blende structure that has been commonly reported. Meanwhile, a bulgy GaSb nanoplate also appears on top of GaAs/GaSb core-shell NWs and possesses a pure zinc blende phase. The growth mode for core-shell morphology and underlying mechanism for crystal phase selection of GaAs/GaSb nanowire heterostructures are discussed in detail.